2SA1514K

High-voltage Amplifier Transistor (120V, 50mA) 2SA1579 / 2SA1514K Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SC4102 / 2SC3906K Absolute maximum ratings (Ta=25C) Parameter Dimensions (Units : mm) 2SA1579 (1) 0.65 0.65 0.7 0.8 0.3 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −120 −120 −5 −50 0.2 150 −55 to +150 Unit V V V mA W 1.25 2.1 0.15 0.2 (2) 0.1Min. 0~0.1 Each lead has same dimensions °C °C ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SA1514K (1) 0.4 Packaging specifications and hFE Type (3) 1.6 0.3Min. 0 to 0.1 Package hFE Marking Code Basic ordering unit (pieces) ∗Denotes hFE 2SA1579 UMT3 RS R∗ T106 3000 2SA1514K SMT3 RS R∗ T146 3000 2.8 0.15 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −120 −120 −5 − − − 180 − − Typ. − − − − − − − 140 3.2 Max. − − − −0.5 −0.5 −0.5 560 − − Unit V V V μA μA V − MHz pF IC= −50μA IC= −1mA IE= −50μA VCB= −100V VEB= −4V IC/IB= −10mA/−1mA VCE= −6V, IC= −2mA VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 1/2 2012.01 - Rev.B 1.1 0.95 0.95 1.9 2.9 (2) 0.9 1.3 (1) Emitter (2) Base (3) Collector 2.0 2SA1579 / 2SA1514K Electrical characteristics curves −10 Ta=25°C Data Sheet −50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −25.0 −22.5 −20.0 Ta=25°C VCE= −6V Ta=25°C −10 −5 −2 −1 −0.5 −0.2 −0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 DC CURRENT GAIN : hFE −8 −20 500 VCE= −1V −5V −17.5 −3 V −6 −15.0 200 −12.5 −4 −10.0 −7.5 100 −2 −5.0 −2.5μA IB=0 50 0 −4 −8 −12 −16 −20 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C −0.5 TRANSITION FREQUENCY : fT (MHZ) Ta=25°C VCE= −6V 500 20 Ta=25°C f=1MHZ IE=0A 10 −0.2 IC/IB=50/1 Cob 200 5 −0.1 20/1 10/1 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 50 0.5 1 2 5 10 20 50 1 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-Emitter saturation voltage vs. collector current Fig.5 Transition frequency vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage 20 EMITTER INPUT CAPACITANCE : Cib (pF) Cib Ta=25°C f=1MHZ IC=0A 10 5 2 1 −0.5 −1 −2 −5 −10 −20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage www.rohm.com c ○ 2012 ROHM Co., Ltd. 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