2SA1514KT146S

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (−120V, −50mA) 2SA1579 / 2SA1514K / 2SA1038S !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 2SA1579 1.25 !Absolute maximum ratings (Ta=25°C) Junction temperature Storage temperature PC Tj Tstg 0.2 2.1 Unit V V V mA Limits −120 −120 −5 −50 0.2 0.3 150 −55~+150 0~0.1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SA1579 / 2SA1514K dissipation 2SA1038S Symbol VCBO VCEO VEBO IC 0.15 Parameter 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 W °C °C (1) Emitter (2) Base (3) Collector R∗ T106 3000 R∗ T146 3000 ∗Denotes h (2) 1.6 2.8 0.3Min. FE Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 2SA1038S 1.1 Marking Code Basic ordering unit (pieces) 2SA1038S SPT RS − TP 5000 0.8 2SA1514K SMT3 RS 0~0.1 2SA1579 UMT3 RS Type 0.15 Package hFE (3) 0.4 !Packaging specifications and hFE 0.95 0.95 1.9 2.9 (1) 2SA1514K (1) Emitter (2) Base (3) Collector 2 (15Min.) 3Min. 3 4 0.45 2.5 0.5 0.45 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −120 − − V IC=−50µA Collector-emitter breakdown voltage Parameter BVCEO −120 − − V IC=−1mA Conditions Emitter-base breakdown voltage IE=−50µA BVEBO −5 − − V Collector cutoff current ICBO − − −0.5 µA VCB=−100V Emitter cutoff current IEBO − − −0.5 µA VEB=−4V VCE(sat) − − −0.5 DC current transfer ratio hFE 180 − 560 − Transition frequency fT − 140 − MHz Output capacitance Cob − 3.2 − pF Collector-emitter saturation voltage V IC/IB=−10mA/−1mA VCE=−6V, IC=−2mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz Taping specifications (1) Emitter (2) Collector (3) Base