2SA1576UBTLR

2SA1576UB General purpose small signal amplifier (50V, 0.15A) 2SA1576UB Applications General purpose small signal amplifier. Dimensions (Unit : mm) UMT3F 2.0 0.9 0.53 2.1 1.25 0.425 0.425 (3) 0.53 Features 1) Excellent hFE linearity. 2) Complements the 2SC4081UB. 0.32 (1) (2) 0.13 0.65 0.65 1.3 Structure PNP silicon epitaxial planar transistor. Each lead has same dimensions (1) Base (2) Emitter (3) Collector ∗ = Denotes hFE Abbreviated symbol : F ∗ Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Parameter VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V IC −150 mA Collector current ICP ∗1 −200 mA PD ∗2 200 mW Tj 150 ˚C Tstg −55 to +150 ˚C Power dissipation Junction temperature Range of storage temperature ∗1 Pw=1ms Single pulse ∗2 Each terminal mounted on a recommended land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Collector-base breakdown voltage BVCBO −60 − − V IC= −50μA Emitter-base breakdown voltage Unit Conditions BVEBO −6 − − V IE= −50μA Collector cutoff current ICBO − − −100 nA VCB= −60V Emitter cutoff current IEBO − − −100 nA VEB= −6V VCE(sat) − − −0.5 V IC/IB= −50mA/−5mA hFE 120 − 390 − VCE= −6V, IC= −1mA Transition frequency fT − 140 − MHz Output capacitance Cob − 4.0 5.0 pF Collector-emitter saturation voltage DC current gain www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz 2010.09 - Rev.D 2SA1576UB Data Sheet hFE rank categories Rank Q R hFE 120 to 270 180 to 390 Electrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5μA 0 BASE TO EMITTER VOLTAGE : VBE (V) −0.4 −0.8 −1.2 −1.6 DC CURRENT GAIN : hFE 25˚C 200 100 −40˚C 100 50 50 −250 −200 −150 −100 −20 −50μA IB=0 0 −1 −2 −3 −5 −4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/2 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −0.5 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −500 −450 −400 −350 −300 Fig.3 Grounded emitter output characteristics (II) Ta=100˚C 200 Ta=25˚C −40 Fig.2 Grounded emitter output characteristics (I) VCE= −5V −3V −1V Ta=25˚C −60 IB=0 −2.0 500 500 −80 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 2010.09 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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