2SA1585S

2SA1585S

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    2SA1585S - Low VCE(sat) Transistor (−20V, −3A) - Rohm

  • 详情介绍
  • 数据手册
  • 价格&库存
2SA1585S 数据手册
2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. External dimensions (Unit : mm) 2SB1424 0.5±0.1 0.2 4.5+0.1 − 1.6±0.1 2SA1585S 4±0.2 2±0.2 3±0.2 1.5±0.1 4.0±0.3 2.5+0.2 −0.1 (15Min.) (1) (2) (3) 0.4±0.1 1.5±0.1 1.0±0.2 0.1 0.4+0.05 − 0.15 0.45+0.05 − Structure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 3Min. 5 0.4 2.5 +0.1 − 0.5 +0.15 0.45 −0.05 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter (1) (2) (3) Abbreviated symbol: AE ∗ Denotes h ∗ ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base FE Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC ICP Limits −20 −20 −6 −3 −2 −5 0.5 0.4 150 −55 to 150 Unit V V V A A(Pulse) W 2SB1424 Collector current 2SA1585S ∗ Collector power dissipation 2SB1424 2SA1585S PC Tj Tstg Junction temperature Storage temperature °C °C ∗ Single pulse Pw=10ms Rev.A 1/3 2SB1424 / 2SA1585S Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −20 −20 −6 − − − 120 − − Typ. − − − − − − − 240 35 Max. − − − −0.1 −0.1 −0.5 390 − − Unit V V V IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V Conditions µA µA V − MHz pF IC/IB= −2A/ −0.1A VCE= −2V, IC= −0.1A VCE= −2V, IE=0.5A, f=100MHz VCB= −10V, IE=0A, f=1MHz Packaging specifications and hFE Package Code Type 2SA1585S 2SB1424 hFE QR QR − Basic ordering unit (pieces) TP 5000 Taping T100 1000 − hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves −10 −5 VCE= −2V −2.0 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −5m −2m −1m 0 Ta=100°C 25°C −40°C −1.6 −12mA −10mA COLLECTOR CURRENT : IC (A) −20mA −18mA −16m A Ta=25°C −14mA −5 −50mA Ta=25°C −4 −1.2 −8mA −3 −45mA −40mA 35mA − −30mA −25mA −20mA −15mA −6mA −0.8 −4mA −2mA IB=0A −1.0 −2 −10mA −5mA IB=0A −0.4 −1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 −0.2 −0.4 −0.6 −0.8 0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) Rev.A 2/3 2SB1424 / 2SA1585S Transistors 5k 2k VCE= −2V Ta=100°C 25°C −40°C −2 −1 −500m −200m −100m −50m −20m −10m −5m COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 −2 −1 −500m −200m −100m −50m −20m −10m −5m IC/IB=20 Ta=100°C 25°C −40°C DC CURRENT GAIN : hFE 1k 500 200 100 50 20 10 5 −1m −2m Ta=100°C 25°C −40°C −5m −0m −20m −50m −100m −200m −500m −1 −2 −5 −10 −2m −1m −2m −5m −10m −20m −50m −100m −200m −500m −1 −2 −5 −10 −2m −1m −2m −5m −10m −20m −50m −100m −200m −500m −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current IC/IB=50 Fig.5 Collector-emitter saturation voltage vs. collector curren ( ) Ta=25°C f=1MHz IE=0A IC=0A Cib Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Ta=25°C VCE= −2V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −2 −1 −500m −200m −100m −50m −20m −10m −5m EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 1000 TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 Ta=100°C −40°C 25°C 200 100 50 Cob 20 10 −0.1 −0.2 −0.5 −1 −2m −1m −2m −5m −10m −20m −50m −100m −200m −500m−1 −2 −5 −10 −2 −5 −10 −20 −50 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (A) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Fig.8 ) Gain bandwidth product vs. emitter current Collector output capacitance vs. collector-base voltage Fig.9 Emitter input capacitance vs. emitter base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
2SA1585S
### 物料型号 - 型号:2SB1424 / 2SA1585S

### 器件简介 - 类型:晶体管 - 描述:低VCE(sat)晶体管(-20V, -3A) - 特点: 1. 低VCE(sat):VCE(sat) = -0.2V(典型值) 2. 出色的直流电流增益特性 3. 与2SD2150 / 2SC4115S互补

### 引脚分配 - 结构:外延平面型 - 材料:PNP硅晶体管

### 参数特性 - 绝对最大额定值(Ta=25°C): - 集电极-基极电压(VcBO):-20V - 集电极-发射极电压(VcEO):-20V - 发射极-基极电压(VEBO):-6V - 集电极电流(2SB1424):-3A - 集电极电流(2SA1585S):-2A - 集电极功率耗散(2SB1424):0.5W - 集电极功率耗散(2SA1585S):0.4W - 结温(Tj):150°C - 存储温度(Tstg):-55至150°C

### 功能详解 - 电气特性(Ta=25°C): - 集电极-基极击穿电压(BVcBo):20V - 集电极-发射极击穿电压(BVcEo):20V - 发射极-基极击穿电压(BVEBO):-6V - 集电极截止电流(Ic8o):-0.1A - 发射极截止电流(IEBO):-0.1A - 集电极-发射极饱和电压(VCE(sat)):-0.5V - 直流电流转移比(hFE):120至390 - 转换频率(fr):240MHz - 输出电容(Cob):1至35pF

### 应用信息 - 应用电路图和电路常数:提供的电路图和电路常数仅供参考,实际使用时请根据周边条件设计电路和确定电路常数。

### 封装信息 - 封装类型: - TP:T100 - 2SA1585S:QR - 2SB1424:QR - 基本订购单位(件): - TP:5000 - 2SA1585S:2000 - 2SB1424:2000
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