2SA1774EB_08

2SA1774EB Transistors General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. Dimensions (Unit : mm) 2SA1037AK (1) 2SA1576A (1) 0.95 0.95 1.9 2.9 0.65 0.65 0.8 0.7 0.4 (3) 0.3 (2) (3) 1.25 1.6 2.8 0.15 0.15 2.1 0.2 (2) Structure Epitaxial planar type. PNP silicon transistor 0.8 1.1 0.3 to 0.6 0 to 0.1 0.1 to 0.4 Each lead has same dimensions Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector 0 to 0.1 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ 2SA1774 0.2 (1) (2) 2SA2029 1.2 0.8 (2) (3) (1) 0.5 0.5 1.0 0.3 0.8 1.6 0.15 0.2 1.2 0.32 0.13 0 to 0.1 0.55 0.5 0.1Min. 0 to 0.1 0.7 0.15Max. 0.22 ROHM : EMT3 EIAJ : SC-75A (1) Emitter (2) Base (3) Collecto ROHM : VMT3 EIAJ : Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ 2SA933AS 4 3 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE Rev.A 0.4 0.4 (3) 1.6 0.2 0.2 (1) Base (2) Emitter (3) Collector 0.9 1.3 2.0 1/3 2SA1774EB Transistors Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SA1037AK, 2SA1576A Symbol VCBO VCEO VEBO IC Limits −60 −50 −6 −0.15 0.2 Unit V V V A (DC) Collector power dissipation 2SA2029, 2SA1774 2SA933AS PC 0.15 0.3 W Junction temperature Storage temperature Tj Tstg 150 −55 to +150 ˚C ˚C Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4.0 Max. − − − −0.1 −0.1 −0.5 560 − 5.0 Unit V V V µA µA V − MHz pF IC= −50µA IC= −1mA IE= −50µA VCB= −60V VEB= −6V IC/IB= −50mA/−5mA VCE= −6V, IC= −1mA VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz Conditions Packaging specifications and hFE Package Code Basic ordering unit (pieces) T146 3000 − − − − − − − T106 3000 − − Taping TL 3000 − − − − − − − T2L 8000 TP 5000 − − − − Type 2SA2029 hFE QRS 2SA1037AK QRS 2SA1576A 2SA1774 2SA933AS QRS QRS QRS hFE values are classified as follows: Item hFE Q 120 to 270 R 180 to 390 S 270 to 560 Rev.A 2/3 2SA1774EB Transistors Electrical characteristic curves −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C VCE= −6V −10 −35.0 Ta=25˚C −31.5 −28.0 −24.5 −100 Ta=25˚C −500 −450 −400 −350 −300 −8 −80 −6 −21.0 −17.5 −60 −250 −200 −4 −14.0 −10.5 −40 −150 −100 −2 −7.0 −3.5µA −20 −50µA IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25˚C VCE= −5V −3V −1V DC CURRENT GAIN : hFE 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100˚C 25˚C −40˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 100 −0.2 IC/IB=50 −0.1 20 10 100 50 50 VCE= −6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE= −12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 20 Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 Ta=100˚C 25˚C −40˚C 200 5 −0.1 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0