2SA1900T100Q

2SA1900 Transistors Medium power transistor (−50V, −1A) 2SA1900 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.15V at IC / IB = −500mA/ −50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053 MPT3 (1)Base (2)Collector (3)Emitter z Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO −60 V VCEO −50 V Emitter- base voltage VEBO −5 V Parameter IC Collector current −1 A −2 0.5 A (Pulse) Collector power dissipation PC 2 W Collector power dissipation tj 150 °C tstg −55 to +150 °C Storage temperature ∗1 W ∗2 + + ∗1 Pw=20ms, Duty=1/2 ∗2 When mounted on a 40 40 0.7mm seramic board. zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO −60 −50 − − − − V V IC = −50µA IC = −1mA Emitter-base breakdown voltage BVEBO ICBO −5 − − V IE = −50µA − − −0.1 µA VCB = −40V − − −0.1 µA − − −0.4 V VEB = −4V IC/IB = −500mA/−50mA 120 − 270 − VCE/IC = −3V/−0.5A Transition frequency IEBO VCE(sat) hFE fT − 150 − MHz Output capacitance Cob − 20 − pF Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Conditions VCE = −5V , IE = 50mA , f=100MHz VCB = −10V , IE = 0A , f=1MHz zPackaging specifications and hFE Type 2SA1900 Package hFE MPT3 Q AL ∗ Marking Code T100 Basic ordering unit (pleces) 1000 ∗ Denotes hFE Rev.C 1/2 2SA1900 Transistors 1000 −6mA 500 −5mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) −0.8 −7m Ta=25°C Ta=25°C A −8mA −9mA −10mA −4mA −0.6 −3mA −0.4 −2mA IB=−1mA −0.2 VCE=−3V 200 100 50 20 10 5 2 0 0 −1 −2 −3 −4 1 −0.001 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10 5 2 1 1m 2m 5m 10m 20m 50m 0.1 0.2 0.5 1 −10 −5 −2 −1 −1m 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 −0.1 −10m −100m −1 −2 Fig.3 Collector-emitter saturation voltage vs.collector current −10 Ta=25°C ∗Single nonrepeatitive pulse −5 −2 IC Max. (Pulse∗) 10 −1 0m s∗ −0.5 s∗ 20 −20 0m 50 −50 =1 100 −100 COLLECTOR CURRENT : IC (A) Fig.2 DC current gain vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob( (pF) 200 −1 −2 −200 Pw TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE= −5V 500 −0.1 Ta=25°C −500 IC/IB=10 COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics 1000 −0.01 −1000 COLLECTOR CURRENT : IC (A) −1.0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectric characteristics curves D C −0.2 −0.1 −0.05 −0.02 −1 −10 −100 −0.01 −0.1 −1 −10 −100 EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Gain bandwith product vs. emitter current Fig.5 Collector output capacitance vs. collector-base voltage Fig.6 Safe operating area Rev.C 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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