2SA1952TLQ

2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dimensions (Units : mm) 1.5 5.1 (2) 6.5 5.5 2.3 (1) 0.9 0.75 2SA1952 Collector current IC Collector power dissipation PC Junction temperature Storage temperature Tj Tstg Unit V V V A A(Pulse) W W(Tc=25°C) °C °C 0.8Min. 1.5 2.5 9.5 ROHM : CPT3 EIAJ : SC-63 zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA1952 CPT3 Q TL 2500 zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) −100 −60 −5 − − − − − − 120 − − − − − − − − − − − − − − − 80 130 − − − − − − −10 −10 −0.3 −0.5 −1.2 −1.5 270 − − 0.3 1.5 0.3 V V V µA µA V V V V − MHz pF µs µs µs DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time hFE fT Cob ton tstg tf 2.3 Limits −100 −60 −5 −5 −10 1 10 150 −55~+150 1.0 Symbol VCBO VCEO VEBO 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage C0.5 0.5 zAbsolute maximum ratings (Ta = 25°C) 0.65 2.3 (3) 0.9 Conditions IC = −50µA IC = −1mA IE = −50µA VCB = −100V VEB = −5V IC/IB=−3A/−0.15A IC/IB=−4A/−0.2A IC/IB=−3A/−0.15A IC/IB=−4A/−0.2A VCE = −2V , IC = −1A VCE = −10V , IE = 0.5A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz IC = −3A , RL = 10Ω IB1 = −IB2 = −0.15A VCC −30V (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)