2SA1952_09

High-speed Switching Transistor (-60V, -5A) 2SA1952 Features 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. Dimensions (Unit : mm) 2SA1952 (1) 0.9 0.75 5.5 1.5 2.3 5.1 0.9 (3) ( 2) 2.3 Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −100 −60 −5 −5 −10 1 10 150 −55~+150 Unit V V V A A(Pulse) W W(Tc=25°C) °C °C 0.65 C0.5 0.5 1.0 0.5 1.5 2.5 9.5 2.3 0.8Min. ROHM : CPT3 EIAJ : SC-63 Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA1952 CPT3 Q TL 2500 Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob ton tstg tf Min. −100 −60 −5 − − − − − − 120 40 − − − − − Typ. − − − − − − − − − − − 80 130 − − − Max. − − − −10 −10 −0.3 −0.5 −1.2 −1.5 270 − − − 0.3 1.5 0.3 Unit V V V μA μA V V V V − − MHz pF μs μs μs Conditions IC = −50μA IC = −1mA IE = −50μA VCB = −100V VEB = −5V IC/IB= −3A/ −0.15A IC/IB= −4A/ −0.2A IC/IB= −3A/ −0.15A IC/IB= −4A /−0.2A VCE = −2V , IC = −1A VCE = −2V , IC = −3A VCE = −10V , IE = 0.5A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz IC = −3A , RL = 10Ω IB1 = −IB2 = −0.15A VCC −30V Transition frequency Output capacitance Turn-on time Storage time Fall time www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.A 6.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2SA1952 Electrical characteristics curves −5 −10 0mA Data Sheet AA 0m m −9 −80 COLLECTOR CURRENT : IC (A) −70mA Tc =25°C COLLECTOR CURRENT : IC (A) −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 0 −50mA DC CURRENT GAIN : hEF −4 −60mA Ta=100°C 25°C −25°C VCE= −2V Pulsed 1000 500 200 100 50 20 10 5 2 Ta=100°C 25°C −25°C VCE= −2V Pulsed −3 −40mA −30mA −20mA −2 −1 −10mA IB=0A 0 0 −1 −2 −3 −4 −5 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 BASE TO EMITTER VOLTAGE : VBE (V) 1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 VCE(sat) Ta= −25°C 25°C 100°C VBE(sat) TRANSITION FREQUENCY: fT (MHz) IC/IB=20 Pulsed 1000 500 200 100 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 10000 5000 2000 1000 500 200 100 50 20 10 −0.1 −0.2 −0.5 −1 −2 Ta=25°C VCE= −10A Ta=25°C f=1MHz IE=0A Ta=100°C 25°C −25°C −2 −5 −10 0.2 0.5 1 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage Fig.5 Resistance ratio vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage 10 5 TURN ON TIME : ton(μs) STRAGE TIME : tstg(μs) FALL TIME : tf(μs) IE=20IB1= −20IB2 tstg ton tf 2 1 0.5 0.2 0.1 0.05 0.02 0.01 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (A) Fig.7 Switching characteristics www.rohm.com c ○ 2009 ROHM Co., Ltd. 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