2SA2018

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. Dimensions (Unit : mm) 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = −200mA / IB = −10mA Each lead has same dimensions ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 Abbreviated symbol : BW (1) Emitter (2) Base (3) Collector 2SA2030 Each lead has same dimensions Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP VMT3 PC EMT3 SMT3 Tj Tstg Limits −15 −12 −6 −500 −1 150 200 150 −55 to +150 Unit V V V mA A mW °C °C ROHM : VMT3 Abbreviated symbol : BW (1) Base (2) Emitter (3) Collector 2.9 1.1 0.4 0.8 2SA2119K (3) ∗ (2) (1) 1.6 2.8 Collector power dissipation Junction temperature Storage temperature ∗Single pulse, Pw=1ms 0.95 0.95 0.15 1.9 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Abbreviated symbol : BW 0.3Min. (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO −15 − Collector-emitter breakdown voltage BVCEO −12 − Emitter-base breakdown voltage BVEBO −6 − Collector cutoff current ICBO − − Emitter cutoff current IEBO − − 270 − DC current transfer ratio hFE − −100 Collector-emitter saturation voltage VCE (sat) − 260 Transition frequency fT Output capacitance Cob − 6.5 Max. Unit Conditions − V IC= −10µA − V IC= −1mA − V IE= −10µA −100 nA VCB= −15V −100 nA VEB= −6V 680 − VCE= −2V / IC= −10mA −250 mV IC= −200mA / IB= −10mA − MHz VCE= −2V, IE=10mA, fT=100MHz − pF VCB= −10V, IE=0A, f=1MHz Rev.C 1/2 2SA2018 / 2SA2030 / 2SA2119K Transistors Packaging specifications and hFE Type hFE 2SA2119K 2SA2018 2SA2030 Package name Code Basic ordering unit (pieces) T146 3000 − − Taping TL 3000 − − T2L 8000 − − Electrical characteristic curves 1000 VCE=2V 200 I B =700µA 1000 IB =600µA I B =500µA IB =400µA IB =300µA IB =200µA VCE=2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 500 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 Ta=125°C Ta=25°C Ta= −40°C 180 160 140 120 100 80 60 40 20 0 IB =100µA IB =0µA 500 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 Ta=125°C Ta=25°C Ta= −40°C Ta=25°C pulsed BASE TO EMITTER VOLTAGE : VBE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics 1000 500 IC / IB=20 Fig.2 Typical Output Characteristics BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 500 Ta=25°C Fig.3 DC Current Gain vs. Collector Current 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 Ta= −40°C Ta=25°C Ta=125°C IC / IB=20 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 Ta=125°C Ta=25°C Ta= −40°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 IC / IB=50 IC / IB=20 IC / IB=10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Cob Cib Fig.6 Base-Emitter Saturation Voltage vs.Collecter Current TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 VCE=2V Ta=25°C IE=0A f=1MHz Ta=25°C 50 100 200 500 1000 EMITTER CURRENT : IC (mA) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Gain Bandwidth Product vs. Emitter Current Fig.8 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Rev.C 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0