2SA2047
Transistor
Medium power transistor (−30V, −0.5A)
2SA2047
!Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 !External dimensions (Units : mm)
0.65 0.65 0.7
UMT3
0.3
(3)
(1)
1.25
0.2
2.1
0.15
(2)
(1)Emitter (2)Base (3)Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : UV
!Applications Small signal low frequency amplifier High speed switching
!Structure PNP Silicon epitaxial planar transistor
!Packaging specifications
Package Type 2SA2047 Code Basic ordering unit (pieces) Taping T106 3000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land
Limits −30 −30 −6 −0.5 −1.0 200 150 −55~+150
Unit V V V A A ∗1 mW ∗2 °C °C
0.9
1.3
2.0
1/3
2SA2047
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. BVCBO −30 − Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO −30 − Emitter-base breakdown voltage BVEBO −6 − − − ICBO Collector cut-off current IEBO − − Emitter cut-off current − −150 Collector-emitter saturation voltage VCE (sat) hFE 120 − DC current gain fT − 400 Transition frequency Collector output capacitance Cob − 10 Ton − 40 Turn-on time Tstg − 100 Storage time Tf − 40 Fall time Max. Unit Conditions − V IC= −100µA − V IC= −1mA − V IE= −100µA −1.0 µA VCB= −20V −1.0 µA VEB= −4V −300 mV IC= −100mA, IB= −10mA VCE= −2V, IC= −50mA 390 − − MHz VCE= −10V, IE=100mA, f=10MHz − pF VCB= −10V, IE=0A, f=1MHz − ns IC= −500mA IB1= −50mA − ns IB2=50mA − ns VCC −25V
!hFE RANK
Q 120−270 R 180−390
!Electrical characteristic curves
−10
COLLECTOR CURRENT : IC (A)
1000
−1
Tstg 100 Tf Ton
−0.1 100ms DC −0.01
DC CURRENT GAIN : hFE
SWITCHING TIME : (ns)
10ms 1ms 500us
Ta=25°C VCC= −25V IC/IB=10/1
1000
VCE= −2V
100
Ta=125°C Ta=25°C Ta= −40°C
Single non repetitive Pulse −0.001 −0.1 −1
−10
−100
10 −0.01
−0.1
−1
−10
10 −0.001
−0.01
−0.1
−1
−10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs. Collector Current (Ι)
1000
Ta=25°C
−1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
−10
Ta=25°C
DC CURRENT GAIN : hFE
VCE= −5V VCE= −3V VCE= −2V 100
−0.1
Ta=125°C Ta=25°C Ta= −40°C
−1
IC/IB=100/1 IC/IB=20/1 IC/IB=10/1
−0.1
10 −0.001
−0.01
−0.1
−1
−10
−0.01 −0.001
−0.01
−0.1
−1
−0.01 −0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs. Collector Current (ΙΙ)
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι)
Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ)
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2SA2047
Transistor
TRANSITION FREQUENCY : fT (MHz)
−10
BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR CURRENT : IC (A)
IC/IB=10/1
−1 Ta=125°C Ta=25°C Ta= −40°C −0.1
VCE= −2V
1000
Ta=25°C VCE= −10V
−1
100
Ta= −40°C −0.1 Ta=25°C Ta=125°C
−0.01 −0.001
−0.01
−0.1
−1
−0.01 −0
−0.5
−1
−1.5
10 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
Fig.7 Base-Emitter Saturation Voltage vs.Collecter Current
Fig.8 Grounded Emitter Propagation Characteristics
Fig.9 Transition Frequency
100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C f=1MHz
10
1 −0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
!Switching characteristics measurement circuits
RL=50Ω
VIN
PW
IB1
IC VCC −25V
PW 50µs DUTY CYCLE 1%
IB2
IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM IC 10% Ton Tstg Tf
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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