2SA2048KT146Q

2SA2048K Transistor Medium power transistor (−30V, −1.0A) 2SA2048K 2.9 (2) (3) 0.4 SMT3 0.95 0.95 1.9 (1) !External dimensions (Units : mm) 0.3Min. 1.1 (1) Emitter (2) Base (3) Collector 0.8 1.6 2.8 0.15 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K Each lead has same dimensions Abbreviated symbol : UL !Applications Small signal low frequency amplifier High speed switching !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Type Package Taping Code T146 Basic ordering unit (pieces) 3000 2SA2048K !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP PC Power dissipation Tj Junction temperature Range of storage temperature Tstg Limits −30 −30 −6 −1.0 −2.0 200 150 −55~+150 Unit V V V A A ∗1 mW ∗2 °C °C ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land 1/3 2SA2048K Transistor !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −30 − − V IC= −100µA Collector-emitter breakdown voltage BVCEO −30 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −100µA Collector cut-off current − − −1.0 µA VCB= −20V ICBO Emitter cut-off current IEBO − − −1.0 µA VEB= −4V Collector-emitter saturation voltage VCE (sat) − −150 −300 mV IC= −500mA, IB= −50mA DC current gain hFE VCE= −2V, IC= −100mA 120 − 390 − Transition frequency fT − 350 − MHz VCE= −10V, IE=100mA, f=10MHz Collector output capacitance Cob − 10 − pF VCB= −10V, IE=0mA, f=1MHz Turn-on time Ton − 30 − ns IC= −1.0A IB1= −100mA Storage time Tstg − 100 − ns IB2=100mA Fall time Tf − 20 − ns VCC= −25V !hFE RANK Q 120−270 R 180−390 !Electrical characteristic curves −0.1 10ms 100ms DC −0.01 −1 −10 SWITCHING TIME : (ns) 1ms −1 Single non repetitive Pulse −0.001 −0.01 −0.1 Tstg 100 Tf Ton 10 −0.01 −100 −0.1 −1 1000 VCE= −2V 100 Ta=125°C Ta=25°C Ta=−40°C 10 1 −0.001 −10 −0.01 −0.1 −1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) −10 Ta=25°C VCE= −5V VCE= −3V VCE= −2V 100 10 1 −0.001 −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) −10 −10 IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 DC CURRENT GAIN : hFE Ta=25°C VCC= −25V IC/IB=10/1 DC CURRENT GAIN : hFE 1000 500us COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) −10 −1 Ta=125°C Ta=25°C Ta=−40°C −0.1 −0.01 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) −1 −10 Ta=25°C IC/IB=100/1 IC/IB=20/1 IC/IB=10/1 −0.1 −0.01 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 2/3 2SA2048K IC/IB=10/1 −1 Ta=−40°C −0.1 Ta=25°C Ta=125°C −0.01 −0.001 −0.01 −0.1 −1 −10 −10 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) −10 −0.1 −0.01 Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=125°C Ta=25°C Ta=−40°C −1 COLLECTOR CURRENT : IC (A) 100 VCE= −2V −0.5 0 −1 −1.5 TRANSITION FREQUENCY : fT (MHz) Transistor 1000 Ta=25°C VCE= −10V 100 10 1 0.001 0.01 0.1 1 10 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 10 1 −0.1 −1 −10 −100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance !Switching characteristics measurement circuits RL=25Ω VIN IC IB1 PW VCC −25V IB2 PW 50µs DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM Ton Tstg Tf 90% COLLECTOR CURRENT WAVEFORM IC 10% 3/3