2SA2072

2SA2072 Transistors High voltage discharge, High speed switching, Low Noise (−60V, −3A) 2SA2072 Features 1) High speed switching. ( Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically. (Typ. : −200mV at IC = −2.0A, IB = −200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC5825. External dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 0.9 0.75 Applications High speed switching, Low noise (2) Collector (3) Emitter 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 (1) Base 0.65 Abbreviated symbol : A2072 Structure PNP silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit (pieces) 2SA2072 Taping TL 2500 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed Symbol VCBO VCEO VEBO IC ICP PC Limits −60 −60 −6 −3 −6 1.0 10.0 Unit V V V A A W W °C °C ∗1 ∗2 ∗3 Power dissipation Junction temperature Range of storage temperature ∗1 Pw=100ms ∗2 Ta=25°C ∗3 Tc=25°C Tj Tstg 150 −55 to 150 2.5 1.5 9.5 1/4 2SA2072 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V µA µA Condition IC = −1mA IC = −100µA IE = −100µA VCB = −20V VEB = −4V IC = −2A IB = −0.2A VCE = −2V IC = −100mA VCE = −10V IE =100mA f =10MHz VCB = −10V IE =0mA f =1MHz IC = −3A IB1 = −300mA IB2 =300mA VCC −25V VCE (sat) hFE − 120 − −200 − −500 270 − mV − ∗1 ∗1 Transistor frequency fT 180 MHz Collector output capacitance Turn-on time Storage time Fall time ∗1 Non repetitive pulse ∗2 See switching characteristics measurement circuits Cob ton tstg tf − − − − 50 20 150 20 − − − − pF ns ns ns ∗2 hFE RANK Q 120−270 2/4 2SA2072 Transistors Electrical characteristics curves 200 IB=1000µA 10 COLLECTOR CURRENT : IC (A) 10ms 1ms 100µs 100ms 1000 COLLECTOR CURRENT : IC (mA) 160 900µA 800µA 700µA Ta=25°C VCC=25V IC/IB=10/1 Tstg Tf 1 SW (ns) 120 600µA 500µA DC 0.1 100 Ton 80 400µA 300µA 200µA 100µA 0µA 0.01 40 0 0 1 2 3 4 5 0.001 0.1 1 10 100 10 0.01 0.1 IC (A) 1 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Typical output characteristics Fig.2 Safe operating area Fig.3 Switching Time COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1000 125°C VCE=2V 25°C 1000 Ta=25°C VCE=5V 1 IC/Ib=10/1 125°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 100 −40°C 100 VCE=3V VCE=2V 0.1 25°C −40°C 10 10 1 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs.collector current ( Ι ) Fig.5 DC current gain vs.collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs.collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) TRANSITION FREQUENCY : fT (MHz) 1 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) Ta=25°C 10 IC/Ib=10/1 1000 Ta=25°C VCE=10V 100 Ic/Ib=20/1 0.1 1 −40°C 125°C 25°C 10 Ic/Ib=10/1 0.01 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) Fig.7 Collector-emitter saturation voltage vs.collector current ( ΙΙ ) Fig.8 Base-emitter saturation voltage vs. collector current Fig.9 Transition frequency 3/4 2SA2072 Transistors 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25°C f=1MHz COLLECTOR CURRENT : IC(A) 10 VCE=2V 100 1 25°C 125°C 10 0.1 −40°C 1 0.1 0.01 1 10 100 0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 COLLECTOR TO BASE VOLTAGE : VCB (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.10 Collector output capacitance Fig.11 Grounded emitter propagation characteristics Switching characteristics measurement circuits RL=8.3Ω IB1 VIN PW IB2 VCC −25V IC PW 50µs DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM IC 10% Ton Tstg Tf 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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