2SA2073

High voltage discharge, High speed switching, Low Noise (60V, 3A) 2SA2073 Features 1) High speed switching. ( tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 2.0A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC5826. Dimensions (Unit : mm) ATV Applications High speed switching, Low noise (1) Emitter (2) Collector (3) Base Taping specifications Abbreviated symbol : A2073 Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit (pieces) 2SA2073 Taping TV2 2500 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Power dissipation Junction temperature Range of storage temperature ∗Pw=10ms Symbol VCBO VCEO VEBO IC ICP PC Limits −60 −60 −6 −3 −6 1.0 150 −55 to 150 Unit V V V A A W °C °C ∗ Pulsed tj tstg www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.Ｃ 2SA2073 Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V μA μA Condition IC= −1mA IC= −100μA IE= −100μA VCB= −40V VEB= −4V IC= −2.0A IB= −200mA VCE= −2V IC= −100mA VCE= −10V IE=100mA f=10MHz VCB= −10V IE=0mA f=1MHz IC= −3A IB1= −300mA IB2=300mA VCC ∼ −25V − Data Sheet VCE (sat) hFE − 120 − −200 − 200 −500 270 mV − ∗1 ∗1 Transistor frequency fT − MHz Collector output capacitance Turn-on time Storage time Fall time ∗1 Single pulse ∗2 See switching characteristics measurement circuits Cob ton tstg tf − − − − 40 20 130 20 − − − − pF ns ns ns ∗2 hFE RANK Q 120−270 Electrical characteristic curves −200 IB=−1000μA COLLECTOR CURRENT : IC(A) −10 VCE=−2V 1000 Ta=25°C VCE=−5V COLLECTOR CURRENT : IC (mA) −160 −800μA −700μA DC CURRENT GAIN : hFE −900μA −1 25°C 100 VCE=−3V VCE=−2V −120 −600μA −500μA −80 −400μA −300μA −200μA −100μA 0μA −0.1 125°C −40°C 10 −40 −0.01 0 0 −0.5 −1.0 −1.5 1 −0.001 −0.01 −0.1 −1 −10 0 -1 -2 -3 -4 -5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Typical output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs.collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1000 125°C VCE=−2V 25°C Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) −1 −1 IC/Ib=10/1 125°C DC CURRENT GAIN : hFE 100 −40°C −0.1 Ic/Ib=20/1 Ic/Ib=10/1 −0.1 25°C −40°C 10 −0.01 1 −0.001 −0.01 −0.1 −1 −10 −0.001 −0.001 −0.01 −0.1 −1 −10 −0.01 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs.collector current ( ΙΙ ) Fig.5 Collector-emitter saturation voltage vs.collector current ( Ι ) Fig.6 Collector-emitter saturation voltage vs.collector current ( ΙΙ ) www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.Ｃ 2SA2073 −10 Data Sheet BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) TRANSITION FREQUENCY : fT (MHz) IC/Ib=10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25°C VCE=−10V 1000 Ta=25°C f=1MHz 100 100 −1 −40°C 125°C 25°C 10 10 −0.1 −0.001 −0.01 −0.1 −1 −1 0 1 0.001 0.01 0.1 1 10 1 −0.1 −1 −10 −100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Transition frequency Fig.9 Collector output capacitance 1000 Ta=25°C VCC=−25V tstg tf SW (ns) 100 ton 10 −0.01 −0.1 −1 − 10 COLLECTOR CURRENT : Ic (A) Fig.10 Switching Time Switching characteristics measurement circuits RL=8.3Ω IB1 VIN PW IB2 VCC −25V IC PW 50μs DUTY CYCLE 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM IC 10% ton tstg tf www.rohm.com c ○ 2011 ROHM Co., Ltd. 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