2SA2088

2SA2088 Transistors Medium power transistor (−60V, −0.5A) 2SA2088 Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5876 External dimensions (Unit : mm) UMT3 2.0 0.3 (3) 0.9 0.2 0.7 1.25 (2) (1) 2.1 0.65 0.65 1.3 0.15 (1) Emitter Applications Small signal low frequency amplifier High speed switching (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : VM Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Type Taping T106 3000 Code Basic ordering unit (pieces) 2SA2088 Absolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits −60 −60 −6 −0.5 −1.0 200 150 −55 to 150 Unit V V V A A mW °C °C ∗1 ∗2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Pulsed Tj Tstg Rev.A 0.1Min. 1/3 2SA2088 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V µA µA Condition IC= −1mA IC= −100µA IE= −100µA VCB= −40V VEB= −4V IC= −100mA IB= −10mA VCE= −2V IC= −50mA VCE= −10V IE=100mA f=10MHz VCB= −10V IE=0A f=1MHz IC= −500mA IB1= −50mA IB2=50mA VCC −25V Collector-emitter saturation voltage DC current gain VCE (sat) hFE − 120 − −150 − −500 270 − mV − ∗1 Transition frequency fT 400 MHz Corrector output capacitance Turn-on time Storage time Fall time Cob ton tstg tf − − − − 10 35 100 60 − − − − pF ns ns ns ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits hFE RANK Q 120−270 Electrical characteristic curves −10 1000 COLLECTOR CURRENT : IC (A) −1 100ms 10ms 1ms DC SWITCHING TIME : (ns) 500µs tstg DC CURRENT GAIN : hFE Ta=25°C VCC= −25V IC / IB=10 / 1 1000 VCE= −2V −0.1 100 tf ton 100 Ta=125°C Ta=25°C Ta= −40°C −0.01 −0.001 −0.1 Single non repetitive Pulsed −1 −10 −100 10 −0.01 −0.1 −1 10 −0.001 −0.01 −0.1 −1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) −10 1000 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −10 IC / IB=10 / 1 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE 100 VCE= −5V VCE= −3V VCE= −2V −1 Ta=125°C Ta=25°C Ta= −40°C −1 IC / IB=100/1 IC / IB=20/1 IC / IB=10/1 10 −0.1 −0.1 1 0.001 0.01 0.1 1 −0.01 −0.001 −0.01 −0.1 −1 −0.01 −0.001 −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Rev.A 2/3 2SA2088 Transistors −10 −1 −1 −0.1 Ta=125°C Ta=25°C Ta= −40°C TRANSITION FREQUENCY : fT (MHz) IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) VCE= −2V 1000 BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) Ta=25°C VCE= −10V 100 Ta=125°C Ta=25°C Ta= −40°C −0.1 −0.001 −0.01 −0.1 −1 −0.01 −0 −0.5 −1 −1.5 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 Ta=25°C f=1MHz COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance Switching characteristics measurement circuits RL=50Ω IB1 VIN PW IB2 VCC −25V IC PW 50µs DUTY CYCLE ≤ 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM Ton Tstg Tf IC 10% Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1