2SA2092TLQ

1A / 60V Bipolar transistor 2SA2092 Features 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge resistance for inductive load and capacitance load. 4) Low switching noise. Dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.85 0.4 0.7 1.6 2.8 (3) (2) (1) (1) Base (2) Emitter (3) Collector Structure PNP epitaxial planar silicon transistor 0~0.1 0.3~0.6 Applications High-speed switching, low frequency amplification 0.95 0.95 1.9 0.16 Each lead has same dimensions Abbreviated symbol : VN Packaging specifications Package TSMT3 Packaging type Taping TL Code Part No. 3000 Basic ordering unit (pieces) 2SA2092 Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage Parameter Collector current VEBO −6 V DC IC −1 A PULSE ICP ∗1 −2 A PC ∗2 500 mW Tj 150 °C Tstg −55 to +150 °C Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/3 2011.03 - Rev.A 2SA2092 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Collector-emitter breakdown voltage BVCEO −60 − − V IC= −1mA Collector-base breakdown voltage BVCBO −60 − − V IC= −100μA BVEBO −6 − − V IE= −100μA ICBO − − −1.0 μA VCB= −40V IEBO − − −1.0 μA VEB= −4V VCE(sat) − −200 −500 mV IC= −500mA, IB= −50mA Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain hFE ∗3 120 − 270 − fT ∗1 − 300 − MHz Transition frequency Conditions Unit VCE= −2V, IC= −100mA VCE= −10V, IE=100mA, f=10MHz Collector output capacitance Cob − 15 − pF VCB= −10V, IE=0, f=1MHz Turn-on time ton − 30 − ns Storage time tstg − 100 − ns − 30 − ns IC= −1A, IB1= −100mA IB2=100mA VCC ∼ − −25V Fall time tf ∗2 ∗1 Pulse measurement ∗2 See switching test circuit ∗3 hFE rank hFE RANK Q 120-270 Electrical characteristic curves 125°C 25°C −40°C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 BASE TO EMITTER VOLTAGE : VEB (V) Fig.1 Grounded emitter propagation characteristics 400μA 80 300μA 200μA 40 VCE=2V 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current (ΙΙ) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ −40°C 25°C 10 1 0.001 IB=0μA 0 0 1 2 3 4 5 1 125°C 0.1 25°C 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) 2/3 1 10 10 IC/IB=10/1 0.01 0.1 Fig.3 DC current gain vs. collector current ( Ι ) Fig.2 Typical output characteristics 0.01 0.001 0.01 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) −40°C 1 0.001 100 100μA COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE 500μA 120 10 VCE=3V 125°C 700μA 600μA Ta=25°C VCE=5V VCE=2V 800μA 160 1000 100 900μA COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 1 1000 1000μA DC CURRENT GAIN : hFE 200 VCE=2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) 10 Ta=25°C 1 0.1 0.01 0.001 IC/IB=20/1 IC/IB=10/1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) 2011.03 - Rev.A Data Sheet −40°C 1 25°C 125°C 0.1 0.01 0.001 0.01 0.1 1 Ta=25°C VCE=10V 100 10 1 0.001 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Transition frequency 1000 SWITCHING TIME : SW (ns) 1000 IC/IB=10/1 TRANSITION FREQUENCY : FT (MHz) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 10 COLLECOTR OUTPUT CAPACITACNE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2SA2092 1000 100 Ta=25°C f=1MHz Cib Cob 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCE (V) EMITTER TO BASE VOLTAGE : VBE (V) Fig.9 Collector output capacitance Emitter input capacitance Ta=25°C VCC= −25V IC/IB= −IC/IB2=10 tstg 100 tf ton 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.10 Switching Time Switching characteristics measurement circuits RL=25Ω IC IB1 VIN PW VCC −25V IB2 PW 50μs DUTY CYCLE 1% IB2 IB1 Base current waveform Ton Tstg Tf 90% Collector current waveform www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ IC 10% 3/3 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A