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2SA2093

2SA2093

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    2SA2093 - Power transistor (-60V, -2A) - Rohm

  • 详情介绍
  • 数据手册
  • 价格&库存
2SA2093 数据手册
Power transistor (60V, 2A) 2SA2093 Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 Dimensions (Unit : mm) ATV Applications Small signal low frequency amplifier High speed switching (1) Emitter (2) Collector (3) Base Abbreviated symbol : A2093 Taping specifications Structure PNP epitaxial planar silicon transistor Packaging specifications Package Type Taping TV2 2500 Code Basic ordering unit (pieces) 2SA2093 Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits −60 −60 −6 −2.0 −4.0 1.0 150 −55 to 150 Unit V V V A A W °C °C ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗Pw=10ms Pulsed Tj Tstg www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.B 2SA2093 Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V μA μA Condition IC= −1mA IC= −100μA IE= −100μA VCB= −40V VEB= −4V IC= −1.0A IB= −100mA VCE= −2V IC= −100mA VCE= −10V IE=100mA f=10MHz VCB= −10V IE=0mA f=1MHz IC= −2.0A IB1= −200mA IB2=200mA VCC −25V Data Sheet Collector-emitter saturation voltage DC current gain VCE (sat) hFE − 120 − −200 − −500 390 − mV − ∗ Transition frequency fT 310 MHz Corrector output capacitance Turn-on time Storage time Fall time ∗Single non repetitive pulse Cob Ton Tstg Tf − − − − 25 25 120 30 − − − − pF ns ns ns ∗ hFE RANK Q 120−270 R 180−390 Electrical characteristic curves −10 VCE= −2V 1000 Ta=25°C 1000 VCE= −2V COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE −1 Ta=125°C Ta=25°C Ta= −40°C 100 DC CURRENT GAIN : hFE VCE= −5V VCE= −3V VCE= −2V 100 Ta=125°C Ta=25°C Ta= −40°C −0.1 10 10 −0.01 0 −0.5 −1 −1.5 1 −0.001 −0.01 −0.1 −1 −10 1 −0.001 −0.01 −0.1 −1 −10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current (Ι) Fig.3 DC Current Gain vs. Collector Current (ΙΙ) −10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −10 IC / IB=10 / 1 −10 IC / IB=10 / 1 −1 IC / IB=20/1 IC / IB=10/1 −1 Ta=125°C Ta=25°C Ta= −40°C BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −1 −0.1 −0.1 −0.1 Ta=125°C Ta=25°C Ta= −40°C −0.01 −0.001 −0.01 −0.1 −1 −1 0 −0.01 −0.001 −0.01 −0.1 −1 −10 −0.01 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Fig.6 Base-Emitter Saturation Voltage vs. Collecter Current www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B 2SA2093 Data Sheet 1000 TRANSITION FREQUENCY : fT (MHz) SWITCHING TIME : SW(ns) Ta=25°C VCE= −10V 1000 Ta=25°C f=1MHz 1000 Ta=25°C VCC= −25V IC / IB=10 / 1 tstg COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 100 100 tf ton 10 10 1 0.001 0.01 0.1 1 10 1 −0.1 −1 −10 −100 10 −0.01 −0.1 −1 −10 EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A) Fig.7 Transition Frequency Fig.8 Collector Output Capacitance Fig.9 Switching Time Switching characteristics measurement circuits RL=12.5Ω IB 1 VIN PW IB 2 VCC −25V IC PW 50μs DUTY CYCLE ≤ 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM Ton Tstg Tf IC 10% www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
2SA2093
### 物料型号 - 型号:2SA2093

### 器件简介 - 特点: 1. 高速开关(典型值:30ns在IC=-2A时) 2. 低饱和电压(典型值:在Ic=-1.0A,Ib=-0.1A时为-200mV) 3. 强放电能力,适用于感性负载和电容性负载 4. 与2SC5880互补

- 应用: - 小信号低频放大器 - 高速开关

### 引脚分配 - 结构:PNP外延平面硅晶体管

### 参数特性 - 绝对最大额定值(Ta=25°C): - 集电极-基极电压(VCBO):-60V - 集电极-发射极电压(VCEO):-60V - 发射极-基极电压(VEBO):-6V - 集电极电流(DC):2.0A(脉冲)4.0A - 功率耗散(Pc):1.0W - 结温(Tj):150°C - 存储温度范围(Tstg):-55至150°C

- 电气特性(Ta=25°C): - 集电极-发射极击穿电压(BVCEO):-60V - 集电极-基极击穿电压(BVcBo):60V - 发射极-基极击穿电压(BVEBO):-6V - 集电极截止电流(IcBo):-1.0A - 发射极截止电流(IEBO):1.0A - 集电极-发射极饱和电压(VCE(sat)):-200mV至-500mV(在Ic=-1.0A,Ib=-100mA时) - DC电流增益(hFE):120至390(在VcE=-2V,Ic=-100mA时) - 转换频率(fr):310MHz(在VcE=-10V,IE=100mA,f=10MHz时) - 校正输出电容(Cob):25pF(在VcB=-10V,IE=0mA,f=1MHz时) - 导通时间(Ton):25ns(在Ic=-2.0A时) - 存储时间(Tstg):120ns(在Ib1=-200mA,Ib2=200mA时) - 下降时间(Tf):30ns至1ns(在Vcc=25V时)

### 功能详解 - 该晶体管适用于高速开关和小信号低频放大应用,具有高速开关能力、低饱和电压和强放电能力。

### 应用信息 - 适用于需要高速开关和低频放大的场合,如音频放大器、开关电源等。

### 封装信息 - 封装类型:TV2 - 基本订购单位:2500件
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