2SA2199

2SA2199 Transistors General Purpose Transistor (−50V, −100mA) 2SA2199 Applications Small signal low frequency amplifier Dimensions (Unit : mm) VMN3 Features 1) Excellent hFE linearity. 2) Complements the 2SC6114. 0.1 0.22 (3) 0.16 Structure PNP silicon epitaxial planar transistor 0.1 1.0 0.8 (1) (2) 0.17 0.35 0.6 (1) Base (2) Emitter (3) Collector 0.37 Abbreviated symbol : P Absolute maximum (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=1ms Single pulse ∗2 Each terminal mounted on a recommended land Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg ∗1 ∗2 Limits −50 −50 −5 −100 −200 150 150 −55 to +150 Unit V V V mA mW °C °C 1/3 2SA2199 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −50 −50 −5 − − − 120 − − Typ. − − − − − − − 110 2.0 Max. − − − −0.1 −0.1 −0.3 390 − − Unit V V V µA µA V − MHz pF IC=−1mA IC=−50µA IE=−50µA VCB=−50V VEB=−5V IC/IB=−25mA/−2.5mA VCE=−6V, IC=−2mA VCE=−10V, IE=1mA, f=100MHz VCB=−10V, IE=0A, f=1MHz Conditions hFE RANK Rank hFE Q 120 to 270 R 180 to 390 Electrical characterristic curves 100 COLLECTOR CURRENT : Ic (mA) VCE= −6V Ta=125˚C 25˚C −40˚C 1000 Ta=25˚C VCE= 6V 2V 1000 Ta=125˚C 25˚C −40˚C VCE=6V DC CURRENT GAIN : hFE 10 100 DC CURRENT GAIN : hFE 10 100 100 1 0.1 0.1 1 10 10 0.1 1 10 0.1 1 10 100 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current (Ι) Fig.3 DC current gain vs. collector current (ΙΙ) COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) (V) Ic/Ib=10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 10 COLLECTOR CURRENT : IC (mA) Ta=25˚C f=1MHz IE=0A 50 Ta=25˚C IB=250uA IB=200uA 40 0.1 Ta=125˚C 25˚C −40˚C 30 IB=150uA 20 IB=100uA 10 IB=50uA 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector output capacitance Fig.6 Typical output characteristics 2/3 2SA2199 Transistors BASE-EMITTER EMITTER SATURATION VOLTAGE : VBE(sat) (V) 10 1 Ta=125˚C 25˚C −40˚C TRANSITION FREQUENCY : FT (MHZ) Ic/Ib=10/1 1000 Ta=25°C VCE=10V f=100MHz 100 0.1 0.1 1 10 100 10 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Transition frequency 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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