2SAR512P
Datasheet
PNP -2.0A -30V Middle Power Transistor
lOutline
Parameter
Value
VCEO
IC
-30V
-2.0A
MPT3
Base
Emitter
2SAR512P
(SC-62)
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lFeatures
1) Suitable for Middle Power Driver
2) Complementary NPN Types : 2SCR512P
3) Low VCE(sat)
VCE(sat)= -0.4V(Max.)
(IC/IB= -700mA/ -35mA)
or
Collector
4) Lead Free/RoHS Compliant.
lInner circuit
Collector
lApplications
Motor driver , LED driver
Power supply
Base
Emitter
lPackaging specifications
Part No.
Package
size
(mm)
Taping
code
MPT3
4540
T100
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
12
1,000
Marking
MB
R
2SAR512P
Package
lAbsolute maximum ratings (Ta = 25°C)
Symbol
VCBO
Values
-30
Unit
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-6
V
IC
N
ot
Parameter
Collector-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms , single pulse
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7mm)
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© 2013 ROHM Co., Ltd. All rights reserved.
ICP
PD
-2.0
A
*1
-4.0
A
*2
0.5
W
*3
2.0
W
150
°C
-55 to +150
°C
PD
Tj
Tstg
2013.04 - Rev.B
Data Sheet
2SAR512P
lElectrical characteristics(Ta = 25°C)
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Emitter-base
breakdown voltage
Symbol
Conditions
Min.
Typ.
Max.
Unit
BVCEO
IC = -1mA
-30
-
-
V
BVCBO
IC = -100mA
-30
-
-
V
BVEBO
IE = -100mA
-6
-
-
V
-
-1
mA
ICBO
VCB = -30V
-
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Collector cut-off current
or
Parameter
IEBO
Emitter cut-off current
Collector-emitter
saturation voltage
VEB = -4V
VCE(sat) *1 IC = -700mA, IB = -35mA
-
-
-1
mA
-
-0.20
-0.40
V
hFE
VCE = -2V, IC = -100mA
200
-
500
-
Transition frequency
fT
VCE = -10V, IE = -100mA
f=100MHz
-
430
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
-
15
-
pF
Turn-on time
ton *2
-
30
-
ns
-
170
-
ns
-
15
-
ns
DC current gain
Storage time
Fall time
tstg *2
tf *2
IC= -1A
IB1= -100mA
IB2=100mA
VCC⋍ -10V
*1 Pulsed
*2 See switching time test circuit
N
ot
R
lSwitching time test circuit
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2/6
2013.04 - Rev.B
Data Sheet
2SAR512P
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Typical Output Characteristics
Fig.1 Ground Emitter Propagation Characteristics
Ta=125ºC
75ºC
25ºC
-40ºC
-1000
-100
-10
0
-0.5
-1
-2.5mA
-0.45
-0.40
-2.0mA
-0.35
-0.30
-1.5mA
-0.25
-0.20
-1.0mA
-0.15
-0.10
IB= -0.5mA
-0.05
0.00
-1.5
BASE TO EMITTER VOLTAGE : VBE [V]
0.0
-0.5
-1.0
-1.5
-2.0
COLECTOR TO EMITTE VOLTAGE : VCE [V]
Fig.3 DC Current Gain vs. Collector Current(I)
Fig.4 DC current gain vs. output current (II)
1000
1000
VCE= -2V
R
DC CURRENT GAIN : hFE
Ta=25ºC
Ta=125ºC
75ºC
25ºC
-40ºC
100
N
ot
DC CURRENT GAIN : hFE
-3.0mA
or
COLLECTOR CURRENT : IC [A]
VCE= -2V
-1
-5.0mA
-0.50
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COLLECTOR CURRENT : IC [mA]
-10000
10
-1
-10
-100
-1000
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
100
10
-10000
VCE= -5V
-2V
3/6
2013.04 - Rev.B
Data Sheet
2SAR512P
lElectrical characteristic curves(Ta = 25°C)
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
-1
-0.1
Ta=125ºC
75ºC
25ºC
-40ºC
-0.01
-0.001
-1
Ta=25ºC
or
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
IC / IB = 20
-0.1
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COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
-1
-10
-100
-1000
-0.01
-0.001
-10000
IC / IB = 50
20
10
-1
TRANSITION FREQUENCY : fT [MHz]
R
N
ot
BASE-EMITTER
SATURATION VOLTAGE : VBE(sat) [V]
1000
IC / IB = 20
Pulsed
-0.1
-1
Ta= -40ºC
25ºC
75ºC
125ºC
-10
-100
-1000
-10000
-10000
Ta=25ºC
VCE= -10V
100
10
10
100
1000
EMITTER CURRENT :IE [mA]
COLLECTOR CURRENT : IC [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
-1000
Fig.8 Gain Bandwidth Product
vs. Emitter Current
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
-1
-100
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
-10
-10
4/6
2013.04 - Rev.B
Data Sheet
2SAR512P
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
Fig.10 Safe Operating Area
-10
100
1
-0.1
Cib
Ta=25ºC
Single non repetitive pulse
1ms
-1
10ms
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10
COLLECTOR CURRENT : IC [A]
Ta=25ºC
f=1MHz
IE=0A
IC=0A
or
1000
Cob
-1
-10
-0.1
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
DC
(Mounted on a
ceramic board)
DC
(Mounted on a
reference land)
-0.01
-100
100ms
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
N
ot
R
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]
EMITTER INPUT CAPACITANCE : Cib [pF]
lElectrical characteristic curves(Ta = 25°C)
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5/6
2013.04 - Rev.B
Data Sheet
2SAR512P
lDimensions (Unit : mm)
D
b1
A
Lp
or
E
LE
HE
MPT3
b2
b
c
b4
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x S A
e1
A
l1
β
l3
e
b5
y S
l2
b3
e1
S
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
N
ot
R
A
b
b1
b2
c
D
E
e
e1
HE
LE
Lp
x
y
DIM
b3
b4
b5
l1
l2
l3
β
MILIMETERS
MIN
MAX
1.40
1.50
0.30
0.50
1.50
1.70
0.40
0.60
0.35
0.50
4.40
4.70
2.40
2.70
3.00
1.50
3.70
4.30
0.80
1.20
1.01
1.41
0.15
0.10
INCHES
MIN
0.055
0.012
0.059
0.016
0.014
0.173
0.094
0.118
0.059
0.146
0.031
0.040
-
MILIMETERS
MIN
MAX
0.65
1.70
0.75
1.71
0.58
3.72
45°
MAX
0.059
0.020
0.067
0.024
0.020
0.185
0.106
0.169
0.047
0.056
0.006
0.004
INCHES
MIN
45°
MAX
0.026
0.067
0.030
0.067
0.023
0.146
Dimension in mm / inches
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6/6
2013.04 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
or
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
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3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
R
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
N
ot
13) When providing our Products and technologies contained in this document to other countries,
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R1102A