Midium Power Transistors (-80V / -2.5A)
2SAR544D
Features 1) Low saturation voltage, typically V CE (sat) = -0.4V (Max.) (I C / I B= -1A / -50mA) 2) High speed switching Structure PNP Silicon epitaxial planar transistor Applications Driver Packaging specifications Type Package Code Basic ordering unit (pieces) CPT3 TL 2500
(1)
Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
1.5 5.5
0.9 2.3
(1) (2) (3)
2.3
0.8Min.
0.65
0.5 1.0
Inner circuit
(3)
Absolute maximum ratings (Ta = 25C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
*1 Pw=10ms, Single Pulse *2 Mounted on a substrate. *3 Tc=25 ℃
Limits -80 -80
Unit V V V A A W W C C
VCBO VCEO VEBO
(1) Base (2) Collector (3) Emitter
(2)
DC Pulsed
-6 -2.5 IC ICP *1 -5 PD *2 1 *3 PD 10 150 Tj Tstg -55 to 150
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1/5
2010.07 - Rev.A
2.5
0.75
0.9
1.5
9.5
2SAR544D
Electrical characteristic (Ta = 25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*1 Pulsed *2 See switching time test circuit
Data Sheet
Symbol BVCEO BVCBO BVEBO ICBO IEBO * VCE(sat)1 hFE f T *1 Cob ton *2 tstg *2 t f *2 Min. -80 -80 -6 120 Typ. -200 280 32 50 400 40 Max. -1 -1 -400 390 Unit V V V A A Conditions IC= -1mA IC= -100μA IE= -100μA VCB= -80V VEB= -4V VCE= -3V, I C= -100mA
mV IC= -1A, I B= -50mA VCE= -10V MHz IE=500mA, f=100MHz pF ns ns ns VCB= -10V, I E=0A f=1MHz IC= -1.3A, I B1= -130mA, IB2=130mA, VCC~ -10V _
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2/5
2010.07 - Rev.A
2SAR544D
Electrical characteristic curves (Ta = 25 C)
Fig.1 Typical Output Characteristics -0.5 -5.0mA -0.4 COLLECTOR CURRENT :IC[A] -4.0mA -2.5mA -2.0mA
Data Sheet
Fig.2 DC Current Gain vs. Collector Current (Ⅰ) 1000 Ta=25℃
-3.0mA
-0.3
-1.5mA
DC CURRENT GAIN :hFE
100
VCE=-5V -3V
-0.2
-1.0mA
-0.1
-0.5mA
0.0 0.0 -0.5 -1.0 -1.5 -2.0
10 -1 -10 -100 -1000 -10000
COLECTOR TO EMITTER VOLTAGE:VCE[V]
COLLECTOR CURRENT :IC[mA]
Fig.3 DC Current Gain vs. Collector Current(Ⅱ) 1000 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] VCE=-3V -1
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Ta=25℃
DC CURRENT GAIN :hFE
IC/IB=50 20 10 -0.1
100
Ta=125℃ 75℃ 25℃ -40℃
10 -1 -10 -100 -1000 -10000
-0.01 -1 -10 -100 -1000 -10000
COLLECTOR CURRENT :IC[mA]
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ⅱ) -1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] IC/IB=20 -10000
Fig.6 Ground Emitter Propagation Characteristics VCE=-3V
COLLECTOR CURRENT :IC[mA]
-1000
Ta=125℃ 75℃ 25℃ -40℃
-0.1
Ta=125℃ 75℃ 25℃ -40℃
-100
-10
-0.01 -1 -10 -100 -1000 COLLECTOR CURRENT :IC[mA] -10000
-1 0 -0.4 -0.8 -1.2 BASE TO EMITTER VOLTAGE :VBE[V] -1.6
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3/5
2010.07 - Rev.A
2SAR544D
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs. Collector-Base Voltage 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Cib Ta=25℃ f=1MHz IE=0A IC=0A
Data Sheet
Fig8. Gain Bandwidth Product vs. Emitter Current 1000 Ta=25℃ VCE=-10V
100
TRANSITION FREQUENCY : fT[MHz]
100
10
Cob
1 -0.1 -1 -10 -100
10 10 100 EMITTER CURRENT :IE[mA] 1000
COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V)
Fig9. Safe Operating Area 1ms COLLECTOR CURRENT : IC (A)
-1
10ms
-0.1
DC Ta=25℃ (Mounted on a board) DC Tc=25℃
-0.01
-0.001
Tc=25℃ Single non repetitive pulse -0.1 -1 -10 -100
COLLECTOR TO EMITTER VOLTAGE :VCE(V)
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4/5
2010.07 - Rev.A
2SAR544D
Switching time test circuit RL=7.5Ω VIN Pw IB1 IC
Data Sheet
_ VCC ~ -10V
IB2 Pw _ 50μs ~ DUTY CYCLE≦1%
IB2 BASE CURENT WAVEFORM
IB1
ton 90% COLLECTOR CURRENT WAVEFORM
tstg
tf
IC
10%
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5/5
2010.07 - Rev.A
Notice
Notes
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R1010A
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