2SB1181

2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 Features 1) Hight breakdown voltage and high current. BVCEO= −80V, IC = −1A 2) Good hFE linearty. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. External dimensions (Unit : mm) 2SB1260 0.2 4.5+0.1 − 1.6±0.1 2SB1181 1.5±0.3 0.5±0.1 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3+0.2 −0.1 0.5±0.1 9.5±0.5 0.2 1.5 +0.1 − 0.3 5.5+0.1 − 0.9 4.0 ±0.3 2.5+0.2 −0.1 1.5 0.75 (1) (2) (3) 0.4±0.1 1.5±0.1 0.1 0.4+0.05 − 0.65±0.1 0.9 1.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 (1) (2) (3) Structure Epitaxial planar type PNP silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol: BE ∗ (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 4.4±0.2 0.9 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base ∗ Denotes h Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP FE Limits −80 −80 −5 −1 −2 0.5 ∗1 Unit V V V A (DC) A (Pulse) 2SB1260 Collector power dissipation 2SB1241, 2SB1181 2SB1181 Junction temperature Storage temperature PC 2 1 10 ∗2 ∗3 W W (Tc=25°C) Tj Tstg 150 −55 to 150 °C °C ∗1 ∗ ∗ 2SB1260 : Pw=20ms duty=1/2 2SB1241 : Single pulse, Pw=100ms 2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board. 3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Rev.C 2.5 1/3 2SB1260 / 2SB1181 / 2SB1241 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1260, 2SB1181 2SB1241 Transition frequency 2SB1181 Output capacitance 2SB1260 2SB1181, 2SB1241 fT Cob Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE Min. −80 −80 −5 − − − 82 120 − − − Typ. − − − − − − − − 100 20 25 Max. − − − −1 −1 −0.4 390 390 − − − Unit V V V IC= −50µA IC= −1mA IE= −50µA VCB= −60V VEB= −4V IC/IB= −500mA/ −50mA VCE= −3V, IC= −0.1A VCE= −10V, IE=50mA, f=100MHz VCB= −10V IE=0A f=1MHz Conditions µA µA V − − MHz pF pF Packaging specifications and hFE Package Code Type Taping TL 2500 − − − TV2 2500 − − − T100 hFE PQR QR PQR Basic ordering unit (pieces) 1000 2SB1260 2SB1241 2SB1181 hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Electrical characteristic curves −1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) Ta=25°C VCE= −5V −1.0 −0.8 −0.6 −0.4 −0.2 Ta=25°C −4.5mA −4mA −3.5mA −3mA −2.5mA −2mA −1.5mA −1mA 1000 500 DC CURRENT GAIN : hFE Ta=25°C −100 200 100 50 VCE= −3V −1V −10 −1 −0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) −0.5mA IB=0mA 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 20 10 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current Rev.C 2/3 2SB1260 / 2SB1181 / 2SB1241 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) Ta=25°C 1000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 − 1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE= −5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 20 10 5 2 1 −0.1 -0.2 −0.5 -1 −2 −5 −10 −20 −50 −100 Ta=25°C f=1MHz IE=0A IC/IB=20 10 50 100 200 500 1000 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IC=0A −10 IC Max.(Pulse) IC Max. Ta=25°C ∗Single nonrepetitive pulse 10 5 2 1 500m 200m 100m 50m 20m 10m 5m IC Max.(Pulse) PW −1 DC Ta=25°C Single nonrepetitive pulse ∗ 0m =1 =1 PW 0 =1 PW 200 100 50 PW −0.1 0m s ms =1 s 00 0m s DC −0.01 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 ∗Printed circuit board: −0.001 −0.1 −1 −10 −100 2m 2 1m copper plating at least 1 cm . 0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1.7 mm thick with collector EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig. 7 Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operating area (2SB1260) Fig.9 Safe operating area (2SB1241) −5 COLLECTOR CURRENT : IC (A) −2 −1 Ta=25°C Single nonrepetitive pulse ∗ =1 PW −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1181) 00 ms −50 −100 Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1