2SB1182TLQ

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1 0.75 0.65Max. 0.9 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) 4.4±0.2 C0.5 (2) 14.5±0.5 0.9 Structure Epitaxial planar type PNP silicon transistor 2.3+0.2 −0.1 0.9 1.5±0.3 5.5+0.3 −0.1 6.8±0.2 6.5±0.2 5.1+0.2 −0.1 (3) 2.54 2.54 1.05 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −32 V Emitter-base voltage VEBO −5 V −2 A(DC) IC Collector current Collector power 2SB1182 dissipation A (Pulse) ∗1 −3 W (Tc=25°C) 10 PC ∗2 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C 2SB1240 ∗ ∗ 1 Single pulse, Pw=100ms 2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO −40 − − V IC= −50μA Collector-emitter breakdown voltage BVCEO −32 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50μA ICBO − − −1 μA VCB= −20V Emitter cutoff current IEBO − − −1 μA VEB= −4V Collector-emitter saturation voltage VCE(sat) − −0.5 −0.8 V IC/IB= −2A/ −0.2A hFE 120 − 390 − VCE= −3V, IC= −0.5A Transition frequency fT − 100 − MHz Output capacitance Cob − 50 − pF Parameter Collector cutoff current DC current transfer ratio Unit Conditions ∗ ∗ VCE= −5V, IE=0.5A, f=100MHz VCB= −10V, IE=0A, f=1MHz ∗ Measured using pulse current. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/3 2010.04 - Rev.C 2SB1182 / 2SB1240 Data Sheet Packaging specifications and hFE Package Taping Code Type hFE 2SB1182 QR 2SB1240 QR Basic ordering unit (pieces) TL TV2 2500 2500 − − hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 Electrical characteristic curves COLLECTOR CURRENT : IC (A) −50 −20 −10 −5 −2 −1 −0.4 −1.75mA 100 50 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −1 IC /IB=10 −0.5 −0.2 −0.1 −0.05 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLETOR CURRENT : IC (mA) Fig.7 Base-emitter saturation voltage vs. collector current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 50 −250μA −0.4 −0.8 −1.2 IB=0A −1.6 −2 20 −500 Ta=25°C −200 −100 IC/IB=50 −50 20 10 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Ta=25°C VCE= −5V 500 200 100 50 5 10 20 50 100 200 500 1000 2000 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/3 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector curren ( ) −500 lC/lB=10 −200 −100 Ta=100°C 25°C −40°C −50 −20 −5 −10 −20 COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat)(V) Ta=25°C 100 Fig.2 Grounded emitter output characteristics COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) −500μA VCE= −6V −3V −1V 200 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) DC CURRENT GAIN : hFE 200 −750μA −0.1 Fig.1 Grounded emitter propagation characteristics VCE= −3V −1mA −0.2 0 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100°C 25°C −25°C −1.25mA 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 500 −1.5mA −0.3 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −100 −2mA Ta=25°C 500 −2.25mA −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (mA) −200 −2.5mA Ta=25°C DC CURRENT GAIN : hFE −0.5 VCE= −3V −1000 Ta=100°C 25°C −500 −40°C 300 Ta=25°C f=1MHz IE=0A IC=0A Cib 200 100 Cob 50 20 10 −0.5 −1 −2 −5 −10 −20 −30 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2010.04 - Rev.C 2SB1182 / 2SB1240 COLLECTOR CURRENT : IC (A) −5 −2 IC Max. (Pulse) Data Sheet PW=500μs DC −1 −0.5 PW=1ms PW=100ms −0.2 −0.1 −0.05 Ta=25°C ∗Single nonrepetitive pulse −0.01 −0.1 −0.2 −0.5 −1 −0.02 −2 −5 −10 −20 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1182) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 3/3 2010.04 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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