2SB1189_10

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1189 2SB1238 Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits −80 −80 −5 −0.7 0.5 2 1 150 −55 to +150 °C °C W ∗1 ∗2 0.5 (3) V V V A 1.5 0.4 Unit 0.4 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2SB1238 6.8 2.5 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1189 MPT3 QR 2SB1238 ATV QR − TV2 2500 0.65Max. 1.0 0.9 ∗Denotes h BD∗ T100 1000 0.5 (1) (2) (3) 2.54 2.54 1.05 14.5 4.4 1.5 0.45 FE Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −80 −80 −5 − − − 120 − − Typ. − − − − − −0.2 − 100 14 Max. − − − −0.5 −0.5 −0.4 390 − 20 Unit V V V μA μA V − MHz pF IC=−50μA IC=−2mA IE=−50μA VCB=−50V VEB=−4V IC/IB=−500mA/−50mA VCE/IC=−3V/−0.1A VCE=−10V, IE=50mA, f=100MHz VCB=−10V, IE=0A, f=1MHz Conditions www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4.5 1.6 (2) 1/2 2010.07 - Rev.B 2SB1189 / 2SB1238 Electrical characteristics curves −1.0 COLLECTOR CURRENT : IC (A) Data Sheet Ta=25°C −5mA −0.6 −5 −2 −1 −0.5 −0.2 −0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −4mA DC CURRENT GAIN : hFE −0.8 −7mA −6mA COLLECTOR CURRENT : IC (mA) −10mA −9mA −50 A −8m −20 −10 Ta=25°C VCE= −6V 500 Ta=25°C −0.4 −3mA −2mA 200 100 VCE= −5V −0.2 IB= 0mA −1mA −3V 50 −1V −1 −2 −5 −10 −20 −50 −100 −200 −500 0 0 −2 −4 −6 −8 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C −0.2 −0.1 IC/IB=20/1 −0.05 IC/IB=10/1 TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE= −5V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Ta=25°C f=1MHz IE=0A 200 100 50 Cob 20 10 50 −0.02 20 −0.01 −1 −5 −10 −20 −50 −100 −200 −500 2 5 10 20 50 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCE (V) Fig.5 Gain bandwidth product vs. emitter current Fig.4 Collector-emitter saturation voltage vs.collector current Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IC=0A −1.0 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.005 −0.002 Ta=25°C ∗Single pulse −0.001 −0.1 −0.2 −0.5 −1 DC =1 Pw s∗ 0m =1 Pw s∗ m 00 50 20 10 −0.5 −1 −2 −5 −10 −20 −2 −5 −10 −20 −50 −100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operating area (2SB1189) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/2 2010.07 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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