2SB1237

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SA1515S 4 + 0.2 − 2 + 0.2 − 2SB1237 6.8 + 0.2 − 2.5 + 0.2 − 3 + 0.2 − (15Min.) 0.45 +0.15 −0.05 0.65Max. 1.0 5 2.5 +0.4 −0.1 0.5 0.45 +0.15 −0.05 0.5 + 0.1 − (1) (2) (3) 2.54 2.54 (1) (2) (3) 1.05 14.5 + 0.5 − 4.4 + 0.2 − 3Min. 0.9 0.45 + 0.1 − ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SA1515S dissipation 2SB1237 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits −40 −32 −5 −1 −2 0.3 1 Tj Tstg 150 −55 to +150 Unit V V V A(DC) ∗1 ∗2 A(Pulse) W C C PC ∗ ∗ 1 Single pulse, Pw=100ms 2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −40 −32 −5 − − − 120 − − Typ. − − − − − −0.2 − 150 20 Max. − − − −0.5 −0.5 −0.5 390 − 30 Unit V V V μA μA V − MHz pF IC= −50μA IC= −1mA IE= −50μA VCB= −20V VEB= −4V IC/IB= −500mA/−50mA VCE= −3V, IC= −0.1A VCE= −5V, IE=50mA, f=30MHz VCB= −10V, IE=0A, f=1MHz Conditions ∗ ∗ ∗ Measured using pulse current. www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.04 - Rev.D 2SA1515S / 2SB1237 Packaging specifications and hFE Package Code Type 2SA1515S 2SB1237 hFE QR QR − Basic ordering unit (pieces) TP 5000 Taping TU2 2500 − Data Sheet hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristics curves -500 COLLECTOR CURRENT : IC (mA) -200 -100 -50 -20 -10 -5 -2 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100 C 25 C −55 C COLLECTOR CURRENT : IC (mA) VCE= −6V −500 DC CURRENT GAIN : hFE −3.0 −3.5 −4.0 −400 −4.5 −5.0 −300 −2.5 Ta=25 C −2.0 −1.5 Ta=25 C 1000 500 VCE= −3V −1V 200 −200 −1.0 −100 −0.5 100 0 0 −0.4 −0.8 −1.2 IB=0mA −1.6 −2.0 50 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current(Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat )(V) VCE= −3V 1000 DC CURRENT GAIN : hFE −0.5 Ta=25 C IC/IB=10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −1 −1.0 Ta=25 C −0.8 500 Ta=100 C 200 25 C −55 C −0.2 −0.1 −0.05 −0.6 lC= −500mA −0.4 100 50 −1 −2 −0.02 −0.01 −1 −2 −0.2 lC= −300mA −2 −5 −10 −20 −50 −100 −5 −10 −20 −50 −100 −200 −500 −1000 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 0 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) BASE CURRENT : IB (mA) Fig.4 DC current gain vs. collector current(ΙΙ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. base current TRANSITION FREQUENCY : fT (MHz) Ta=25 C VCE= −5V 200 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 COLLECTOR CURRENT : IC (A) Ta=25 C f=1MHz IE=0A −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.1 −0.2 −0.5 −1 −2 PW =10ms∗ PW =100ms∗ DC IC Max.∗ Ta=25 C ∗Single pulse 50 100 50 20 20 −1 −2 −5 −10 −20 −50 −100 10 −0.5 −1 −2 −5 −10 −20 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs.collector-base voltage Fig.9 Safe operation area (2SB1237) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.04 - Rev.D 2SA1515S / 2SB1237 200 100 Ta=25 C Data Sheet TRANSIENT THERMAL RESISTANCE : Rth ( C/W) 50 20 10 5 2 0.01 0.1 1 10 100 1000 TIME : t (s) Fig.10 Transient thermal resistance (2SB1237) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.04 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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