2SB1238

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1189 2SB1238 Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits −80 −80 −5 −0.7 0.5 2 1 150 −55 to +150 °C °C W ∗1 ∗2 0.5 (3) V V V A 1.5 0.4 Unit 0.4 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2SB1238 6.8 2.5 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1189 MPT3 QR 2SB1238 ATV QR − TV2 2500 0.65Max. 1.0 0.9 ∗Denotes h BD∗ T100 1000 0.5 (1) (2) (3) 2.54 2.54 1.05 14.5 4.4 1.5 0.45 FE Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −80 −80 −5 − − − 120 − − Typ. − − − − − −0.2 − 100 14 Max. − − − −0.5 −0.5 −0.4 390 − 20 Unit V V V μA μA V − MHz pF IC=−50μA IC=−2mA IE=−50μA VCB=−50V VEB=−4V IC/IB=−500mA/−50mA VCE/IC=−3V/−0.1A VCE=−10V, IE=50mA, f=100MHz VCB=−10V, IE=0A, f=1MHz Conditions www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4.5 1.6 (2) 1/2 2010.07 - Rev.B 2SB1189 / 2SB1238 Electrical characteristics curves −1.0 COLLECTOR CURRENT : IC (A) Data Sheet Ta=25°C −5mA −0.6 −5 −2 −1 −0.5 −0.2 −0.1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −4mA DC CURRENT GAIN : hFE −0.8 −7mA −6mA COLLECTOR CURRENT : IC (mA) −10mA −9mA −50 A −8m −20 −10 Ta=25°C VCE= −6V 500 Ta=25°C −0.4 −3mA −2mA 200 100 VCE= −5V −0.2 IB= 0mA −1mA −3V 50 −1V −1 −2 −5 −10 −20 −50 −100 −200 −500 0 0 −2 −4 −6 −8 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C −0.2 −0.1 IC/IB=20/1 −0.05 IC/IB=10/1 TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE= −5V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Ta=25°C f=1MHz IE=0A 200 100 50 Cob 20 10 50 −0.02 20 −0.01 −1 −5 −10 −20 −50 −100 −200 −500 2 5 10 20 50 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCE (V) Fig.5 Gain bandwidth product vs. emitter current Fig.4 Collector-emitter saturation voltage vs.collector current Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cib COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IC=0A −1.0 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.005 −0.002 Ta=25°C ∗Single pulse −0.001 −0.1 −0.2 −0.5 −1 DC =1 Pw s∗ 0m =1 Pw s∗ m 00 50 20 10 −0.5 −1 −2 −5 −10 −20 −2 −5 −10 −20 −50 −100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operating area (2SB1189) www.rohm.com c ○ 2010 ROHM Co., Ltd. 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