2SB1260_11

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features 1) Hight breakdown voltage and high current. BVCEO=80V, IC = 1A 2) Good hFE linearty. 3) Low VCE(sat). Complements the 2SD1898 / 2SD1863 / 2SD1733. Dimensions (Unit : mm) 2SB1260 4.5+0.2 1.6±0.1 1.5± 2SB1181 1.5±0.3 0.5±0.1 6.5±0.2 5.1+0.2 2.3+0.2 C0.5 0.5±0.1 9.5±0.5 5.5+0.3 0.9 4.0 ±0.3 2.5+0.2 1.5 0.75 (1) (2) (3) 0.4±0.1 1.5±0.1 0.4+0.1 0.65±0.1 0.9 1.0±0.2 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 (1) (2) (3) ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 6.8±0.2 2.5±0.2 0.65Max. 1.0 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 14.5±0.5 4.4±0.2 0.9 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Limits −80 −80 −5 −1 −2 0.5 PC 2 1 10 Tj Tstg 150 −55 to +150 ∗2 ∗3 ∗1 Unit V V V A (DC) A (Pulse) 2SB1260 Collector power dissipation 2SB1241, 2SB1181 2SB1181 Junction temperature Storage temperature W W (Tc=25°C) °C °C ∗1 ∗ ∗ 2SB1260 : Pw=20ms duty=1/2 2SB1241 : Single pulse, Pw=100ms 2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board. 3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.05 - Rev.F 2.5 2SB1260 / 2SB1181 / 2SB1241 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1260, 2SB1181 2SB1241 Transition frequency 2SB1181 Output capacitance 2SB1260 2SB1181, 2SB1241 fT Cob Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE Min. −80 −80 −5 − − − 120 120 − − − Typ. − − − − − − − − 100 20 25 Max. − − − −1 −1 −0.4 390 390 − − − Unit V V V IC= −50μA IC= −1mA IE= −50μA VCB= −60V VEB= −4V IC/IB= −500mA/ −50mA VCE= −3V, IC= −0.1A VCE= −10V, IE=50mA, f=100MHz VCB= −10V IE=0A f=1MHz Conditions Data Sheet μA μA V − − MHz pF pF Packaging specifications and hFE Package Code Type 2SB1260 2SB1241 2SB1181 hFE QR QR QR Basic ordering unit (pieces) TL 2500 − − − Taping TV2 2500 − − − T100 1000 hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves 500 4.5mA 5.0mA 4.0mA 3.5mA 1000 3.0mA 400 Ta=25℃ VCE=-5V 1000 Ta=25℃ COLLECTOR CURRENT : I C [ mA] Collector Current : I C [ mA] 2.5mA 2.0mA 100 DC CURRENT GAIN : hFE VCE=-3V 300 1.5mA 200 1.0mA 100 Ta=25℃ Pulsed 0 0.5 1 1.5 2 IB=0.5mA 10 100 VCE=-1V 1 0 0.1 0.2 10 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE : VBE [V] 1 1 10 100 COLLECTOR CURRENT : IC [mA] 1000 COLLECOR - EMITTER VOLTAGE : VCE [V] Fig.1 Ground Emitter Output Characteristics Fig.2 Grounded Emitter Propagation Characteristics Fig.3 DC Current Gain v s Collector Current Ta=25℃ Collector Saturation Voltage : VCE(sat) [ V] TRANSITION FREQUENCY : f T [MHz] Ta=25℃ VCE=-5V COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1 1000 1000 Ta=25℃ f=1MHz IE=0A IC =0A Cib 0.1 IC /IB=20 10 100 100 Cob 0.01 1 10 100 COLLECTOR CURRENT : IC [mA] 1000 10 1 10 100 EMITTER CURRENT : IE [mA] 1000 10 0.1 1 10 100 Fig.4 Collector-Emitter Saturation Voltage v s Collector Current Fig.5 Transition Frewuency v s Emitter Current COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig.6 Emitter Input Capacitance v s. Emitter-Base Voltage Collector Output Capacitance v s. Collector-Base www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.05 - Rev.F Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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