2SB1316

2SB1316 Transistors Power Transistor (−100V , −2A) 2SB1316 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. External dimensions (Unit : mm) 2SB1580 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −100 −100 −8 −2 −3 2 1 10 150 −55 to +150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) °C °C ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 2.3 0.65 2SB1580 Collector PC power 2SB1316 dissipation Junction temperature Tj Tstg Storage temperature ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. (1) 2.3 0.9 ∗2 0.75 ∗1 2SB1316 0.4 5.5 1.5 5.1 (2) 0.9 (3) C0.5 0.5 Packaging specifications and hFE 1.0 Type Package hFE Marking Code Basic ordering unit (pieces) ∗ Denotes hFE 2SB1580 MPT3 1k to 10k BN∗ T100 1000 2SB1316 CPT3 1k to 10k − TL 2500 0.5 1.5 2.5 9.5 2.3 0.8Min. ROHM : CPT3 EIAJ : SC-63 Equivalent circuit C B R1 R1 3.5kΩ R2 300Ω R2 E B : Base C : Collector E : Emitter Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −100 −100 −10 − − − 1000 − − Typ. − − − − − − − 50 35 Max. − − − −10 −3 −1.5 10000 − − Unit V V V µA mA V − MHz pF Conditions IC = −50µA IC = −5mA IE = −5mA VCB = −100V VEB = −7V IC/IB= −1A/−1mA VCE = −2V , IC = −1A VCE = −5V , IE =0.1A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz ∗ ∗ Rev.A 6.5 (1) Base (2) Collector (3) Emitter 1/2 2SB1316 Transistors Electrical characteristics curve −2.0 COLLECTOR CURRENT : IC (A) −1mA −0.9mA −0.7mA −1.2 −0.4 mA −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 DC CURRENT GAIN : hEF −1.6 −0.8mA COLLECTOR CURRENT : IC (A) A 6m −0. A .5m −0 Ta=25°C −10 −5 −2 Ta=25°C VCE= −2V 10k 5k 2k 1k 500 200 100 50 20 10 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 Ta=25°C VCE= −2V −0.8 IB= m −0.3 A −0.4 0 0 −1 −2 −3 −4 −5 −2 −5 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −50 −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR OUTPUT CAPACITANCE: Cob (pF) Ta=25°C IC / IB =1000 1000 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 COLLECTOR CURRENT : IC (A) Ta=25°C IE=0A f=1MHz 50 20 10 5 2 1 500m 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 Ta=25°C ∗ Single NONREPETITIVE PULSE Ic Max. (Pulse∗) Pw=10ms∗ DC Pw=100ms∗ −5 −10 −10 −20 −50 −100 20 50 100 200 500 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector output capacitance vs. collector-base voltage Fig.6 Safe Operating area (2SB1580) 50 COLLECTOR CURRENT : IC (A) 20 10 5 2 1 500m 200m 100m 50m 20m 10m Ta=25°C ∗ Single NONREPETITIVE PULSE Ic Max. (Pulse∗) Pw=10ms∗ DC Pw=100ms∗ 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe Operating area (2SB1316) Rev.A 2/2 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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