2SB1316TL

2SB1580 / 2SB1316 Transistors Power Transistor (−100V , −2A) 2SB1580 / 2SB1316 zExternal dimensions (Units : mm) 2SB1580 4.0 1.5 0.4 1.0 2.5 (1) 0.5 1.6 (2) 3.0 0.5 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. 2SB1580 MPT3 1k~10k BN∗ T100 1000 5.1 0.9 2SB1316 CPT3 1k~10k − TL 2500 0.8Min. 1.5 2.5 9.5 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE zEquivalent circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance ∗ Measured using pulse current. Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob Min. −100 −100 − − − 1000 − 2.3 C0.5 0.5 2.3 1.0 zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 1.5 6.5 0.9 W(Tc=25°C) °C °C 5.5 0.75 2SB1316 0.65 ∗2 2.3 ∗1 W (1) 2SB1580 Collector PC power 2SB1316 dissipation Junction temperature Tj Tstg Storage temperature ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. Unit V V V A(DC) A(Pulse) (2) IC Collector current Limits −100 −100 −8 −2 −3 2 1 10 150 −55~+150 (3) Symbol VCBO VCEO VEBO ROHM : MPT3 EIAJ : SC-62 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 zAbsolute maximum ratings (Ta = 25°C) 1.5 1.5 0.4 (3) Typ. − − − − − − 35 Max. − − −10 −3 −1.5 10000 − Unit V V µA mA V − pF Conditions IC = −50µA IC = −5mA VCB = −100V VEB = −7V IC/IB=−1A/−1mA VCE = −2V , IC = −1A VCB = −10V , IE = 0A , f = 1MHz ∗ ∗ (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)