2SB1412TLQ

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 9.5±0.5 0.9 3.0±0.2 ROHM : CPT3 EIAJ : SC-63 ∗ (1) Base (2) Collector (3) Emitter Abbreviated symbol: BH 2SB1326 2.5±0.2 4.4±0.2 0.9 6.8±0.2 0.65Max. 0.5±0.1 (1) (2) 14.5±0.5 1.0 zStructure Epitaxial planar type PNP silicon transistor 0.2 2.3+−0.1 0.5±0.1 0.9 4.0±0.3 2.5+0.2 −0.1 0.3 5.5+ −0.1 6.5±0.2 0.2 5.1+−0.1 1.5 1.5 +0.2 −0.1 1.6±0.1 2.5 0.5±0.1 4.5+0.2 −0.1 1.5±0.3 2SB1386 1.0±0.2 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. (3) 2.54 2.54 1.05 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base ∗ Denotes h FE Rev.A 1/4 2SB1386 / 2SB1412 / 2SB1326 Transistors zAbsolute maximum ratings (Ta=25°C) Symbol Limits Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V −5 A(DC) Parameter IC Collector current A(Pulse) ∗1 W W ∗2 W W(Tc=25°C) ∗3 W −10 0.5 2 1 10 1 2SB1386 Collector power 2SB1412 dissipation Unit PC 2SB1326 Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C ∗1 ∗2 ∗3 Single pulse, Pw=10ms When mounted on a 40×40×0.7 mm ceramic board. Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO −30 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −20 − − V IC= −1mA BVEBO −6 − − V IE= −50µA ICBO − − −0.5 µA VCB= −20V IEBO − − −0.5 µA VEB= −5V VCE(sat) − 0.35 −1.0 V IC/IB= −4A/ −0.1A Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SB1386,2SB1412 DC current transfer ratio 82 − 390 − 120 − 390 − fT − 120 − MHz Cob − 60 − pF hFE 2SB1326 Transition frequency Output capacitance ∗ ∗ ∗ VCE= −2V, IC= −0.5A VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz ∗ Measured using pulse current. zPackaging specifications and hFE Taping Package Type hFE Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − 2SB1386 PQR 2SB1412 PQR − 2SB1326 QR − − − hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 Rev.A 2/4 2SB1386 / 2SB1412 / 2SB1326 Transistors zElectrical characteristic curves −200m −100m −50m −20m −10m −5m −2m −1m 0 −0.2 Fig.1 Ta=100°C 25°C −25°C 20 −1.2 −1.6 200 Ta=100°C 25°C −25°C 50 20 5 −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) −2 −1 −0.5 −0.2 Ta=100°C 25°C −25°C −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) lC/lB=10 −5 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −1 Ta=100°C 25°C −0.2 −0.1 −0.05 −25°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Ta=25°C −2 −1 −0.5 −0.2 −0.1 IC/IB=50/1 40/1 /1 30/1 10/1 −0.05 −0.02 −0.01 −2m −5m −0.0− -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Collector-emitter saturation voltage vs. collector current ( Collector-emitter saturation voltage vs. collector current ( ) −5 lC/lB=40 −2 −25°C −1 25°C −0.5 −0.2 −0.1 −0.05 Ta=100°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.8 DC current gain vs. collector current ( ) −5 Fig.6 lC/lB=30 −0.5 −5 −10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −2 COLLECTOR CURRENT : IC (A) Collector-emitter saturation voltage vs. collector current ( ) 20 Fig.3 1k COLLECTOR CURRENT : IC (A) −5 50 Grounded emitter output characteristics VCE= −2V 100 −2V −1V 100 −2.0 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.8 500 10 Fig.7 −0.4 VCE= −5V 200 10 IB=0A 0 5k DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 −0.02 −1 2k 1k −0.05 −5mA Fig.2 VCE= −1V 500 −0.1 −2 1k 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 2k 50 −10mA Grounded emitter propagation characteristics 5k 100 −3 0 Ta=25°C 2k −15mA −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 BASE TO EMITTER VOLTAGE : VBE (V) 5k Ta=25°C mA −30 A −25m −20mA DC CURRENT GAIN : hFE Ta=100°C 25°C −25°C −5 −50mA −45mA −40mA −4 −35mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (A) −2 −1 −500m COLLECTOR CURRENT : IC (A) VCE= −2V −5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −10 ) Fig.9 Collector-emitter saturation voltage vs. collector current ( Rev.A ) 3/4 2SB1386 / 2SB1412 / 2SB1326 1 000 lC/lB=50 −25°C 25°C Ta=100°C −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 Ta=25°C VCE= −6V 500 200 100 50 20 10 5 2 1 −5 −10 1 −5 −10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Emitter input capacitance vs. emitter-base voltage 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage Ta=25°C Single nonrepetitive pulse ∗ 50 COLLECTOR CURRENT : IC (A) 100 20 10 5 2 1 500m DC ms −2 200 ms 20 100 00 50 −1 500 1000 Ta=25°C f=1MHz IE=0A 500 0 =1 100 −0.5 50 100 200 1000 Pw 200 −0.2 20 =1 Pw EMITTER INTPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IC=0A 10 −0.1 10 Fig.11 Gain bandwidth product vs. emitter current Fig.10 Collector-emitter saturation voltage vs. collector current ( ) 500 5 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (A) 1000 2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) −5 TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.14 Safe operation area F(2SB1412) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1