2SB1443_11

Power Transistor (−50V, −2A) 2SB1443 Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. Dimensions (Unit : mm) ATV Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −50 −50 −6 −2 −5 1 150 −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 ∗2 W (1) (2) (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature (1) (2) (3) Emitter Collector Base °C °C ∗1 Single pulse, Pw=10ms 2 ∗2 Printed circuit board 1.7mm thick, collector plating 1cm or larger. Packaging specifications and hFE Type 2SB1443 ATV Q − TV2 2500 Package hFE Marking Code Basic ordering unit (pieces) ∗Denotes hFE Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Measured using pulse current Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −50 −50 −6 − − − 120 − − Typ. − − − − − −0.15 − 200 36 Max. − − − −0.1 −0.1 −0.35 270 − − Unit V V V μA μA V − MHz pF IC=−50μA IC=−1mA IE=−50μA VCB=−50V Conditions VEB=−5V IC/IB=−1A/−50mA VCE/IC=−2V/−0.5A VCE=−2V, IE=0.5A, f=100MHz VCB=−10V, IE=0A, f=1MHz ∗ ∗ www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B 2SB1443 Electrical characteristics curves 2.0 Data Sheet −10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : lC (A) 1.8 1.6 1.4 1.2 1 800m 600m 400m 200m 0 Ta=25°C mA lB=10 9mA 8mA 7mA −5 −2 −1 −0.2 −0.1 −0.05 −0.02 −0.01 −5m −2m −1m 0 Ta=1 00°C Ta=25 °C Ta=−4 0°C VCE=2V 5000 VCE=2V 2000 DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 Ta=100°C −0.5 6mA 5mA 4mA 3mA 2mA 1mA Ta=25°C Ta=−40°C 0 1 2 3 4 5 6 7 8 9 10 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 5 -1m -5m -0.02 -0.1 -0.5 -2 -5 -10 -2m -0.01 -0.05 -0.2 -1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded Emitter Output Characteristics Fig.2 Grounded Emitter Propagation Characteristics Fig.3 DC Current Gain vs. Collector Current COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) -1 -0.5 -0.2 Ta=100°C Ta=25°C Ta=−40°C lC/lB=20 COLLECTOR CURRENT : lC (A) 10 IC Max (PULSE) 1 D C 10 ms PW =1 00 s m -0.1 -0.05 -0.02 100m 10m -0.01 -1m -5m -0.02 -0.1 -0.5 -2 -5 -10 -2m -0.01 -0.05 -0.2 -1 1m 0.01 Ta=25°C Single nonrepetitive pulse 0.1 1 10 100 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current Fig.5 Safe Operating Area www.rohm.com c ○ 2011 ROHM Co., Ltd. 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