2SB1668

2SD2607 Transistors Power Transistor (100V, 8A) 2SD2607 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668. !External dimensions (Units: mm) 10.0 4.5 φ 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 100 7 8 10 2 30 150 −55~+150 Unit V V V A (DC) A (Pulse) W W (Tc = 25°C) °C °C 2.54 2.54 (1) (2) (3) (1) (2) (3) 0.75 2.6 ROHM : TO-220FN (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) * * Single pulse, Pw = 10ms !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD2607 TO-220FN 1k~20k 500 !Circuit diagram B C R1 R2 E R1 R2 5kΩ 300kΩ B : Base C : Collector E : Emitter !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. 100 100 1000 Typ. 40 50 Max. 10 3 1.5 20000 Unit V V µA mA V MHz pF IC = 50µA IC = 5mA VCB = 100V VEB = 5V IC/IB = 3A/6mA VCE/IC = 3V/2A VCE = 5V , IE = −0.2A , f = 10MHz VCB = 10V , IE = 0A , f = 1MHz Conditions *1 *1 *2 *1 Measured using pulse current. *2 Transition frequency of the device.