2SB1698

2SB1698 Transistors Low frequency amplifier 2SB1698 Application Low frequency amplifier Driver External dimensions (Units : mm) 4.0 2.5 (1) (2) (3) 1.0 0.5 1.5 0.4 Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV at IC =−1A / IB =−50mA 1.5 0.4 3.0 0.5 0.4 Each lead has same dimensions Abbreviated symbol: FL ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89 (1)Base (2)Collector (3)Emitter Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −30 −30 −6 −1.5 −3 500 2 150 −55~+150 Unit V V V A A ∗1 mW W ∗2 °C °C Packaging specifications Package Type Code Basic ordering unit (pieces) 2SB1698 Taping T100 1000 ∗1 Single pulse, PW=1ms ∗2 Mounted on a 40 + 40+ 0.7(mm)CERAMIC SUBSTRATE Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −200 − 280 13 Max. − − − −100 −100 −370 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−30V VEB=−6V IC=−1A, IB=−50mA VCE=−2V, IC=−100mA ∗ VCE=−2V, IE=100mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz 1.5 1.6 4.5 1/2 2SB1698 Transistors Electrical characteristic curves Ta=100°C VCE=−2V Pulsed BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 1 Ta=−40°C Ta=25°C Ta=100°C 10 Ta=25°C Pulsed 1 DC CURRENT GAIN : hFE Ta=25°C Ta=−40°C VBE(sat) 100 0.1 0.1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 VCE(sat) Ta=100°C Ta=25°C Ta=−40°C 0.01 10 0.001 0.01 0.1 1 10 0.01 0.001 IC/IB=20/1 Pulsed 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 1 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) VCE=−2V Pulsed 1000 Ta=25°C VCE=−2V f=100MHz 1000 Ta=25°C tstg VCE=−5V IC/IB=20/1 0.1 Ta=100°C Ta=25°C Ta=−40°C SWITCHING TIME : (ns) 100 tf 100 tdon 0.01 10 tr 0.001 0 0.5 1 1.5 10 0.01 0.1 1 10 1 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25°C IC=0A f=1MHz Cib 100 Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0