2SB1732

2SB1732

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    2SB1732 - Genera purpose amplification(−12V, −1.5A) - Rohm

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1732 数据手册
2SB1732 Transistors Genera purpose amplification(−12V, −1.5A) 2SB1732 Application Low frequency amplifier Driver Dimensions (Unit : mm) Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA ROHM : TUMT3 Abbreviated symbol : EV 0.2Max. (1)Base (2)Emitter (3)Collector Absolute maximum ratings (Ta=25°C) Limits Symbol VCBO −15 VCEO −12 VEBO −6 IC −1.5 Collector current ICP −3 400 PC Power dissipation Tj 150 Junction temperature Tstg Range of storage temperature −55 to +150 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ∗1Single pulse, PW=1ms ∗2Each Terhinal Mounted on a Recommended Land Packaging specifications Unit V V V A A ∗1 mW∗2 °C °C Package Type Code Basic ordering unit (pieces) 2SB1732 Taping TL 3000 Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −15 −12 −6 − − − 270 − − Typ. − − − − − −85 − 400 12 Max. − − − −100 −100 −200 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−15V VEB=−6V IC=−500mA, IB=−25mA VCE=−2V, IC=−200mA ∗ VCE=−2V, IE=200mA, f=100MHz VCB=−10V, IE=0A, f=1MHz ∗ Rev.B 1/2 2SB1732 Transistors Electrical characteristic curves COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 VCE=−2V PULSED 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 Ta=25°C PULSED DC CURRENT GAIN : hFE Ta=−40°C 25°C 100°C 0.1 Ta=100°C 25°C −40°C 0.01 Ta=100°C 100 25°C −40°C 0.1 IC/IB=50 20 10 0.01 IC/IB=20 PULSED 0.001 0.001 0.01 0.1 1 10 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs.collector current Fig.3 Base-emitter saturation voltage vs.collector current Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 1 Ta=100°C 25°C −40°C 0.1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) VCE=−2V PULSED 1000 Ta=25°C VCE=−2V f=100MHz 100 Ta=25°C IE=0mA f=1MHz 100 10 0.01 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 1 0.1 1 10 100 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.5 Grounded emitter propagation characteristics Fig.6 Gain bandwidth product vs. emitter current Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
2SB1732
### 物料型号 - 型号:2SB1732

### 器件简介 - 类别:晶体管 - 用途:通用放大(-12V, -1.5A) - 应用:低频放大器、驱动器

### 引脚分配 - ROHM:TUMT3 - 简写符号:EV - (1) 基极 (Base) - (2) 发射极 (Emitter) - (3) 集电极 (Collector)

### 参数特性 - 绝对最大额定值(在25°C下): - 集电极-基极电压 (VCBO):-15V - 集电极-发射极电压 (VCEO):-12V - 发射极-基极电压 (VEBO):-6V - 集电极电流 (IC):-1.5A - 功率耗散 (PC):400mW - 结温 (Tj):150°C - 储存温度范围 (Tstg):-55 to +150°C

### 功能详解 - 特点: 1. 集电极电流大。 2. 集电极饱和电压低,$VCE(sat) \leq -200mV$ 在 $I_C = -500mA / I_B = -25mA$ 时。

### 应用信息 - 应用电路图和电路常数:提供的电路图和常数仅供参考,实际应用时请根据周边条件设计电路和确定电路常数。

### 封装信息 - 封装规格: - 类型:TL - 代码:3000 - 基本订购单位(件):2SB1732 - 包装:0(未提供具体包装信息)

### 电气特性 - 电气特性(在25°C下): - 集电极-发射极击穿电压 (BVCEO):-12V - 集电极-基极击穿电压 (BVCBO):-15V - 发射极-基极击穿电压 (BVEBO):-6V - 集电极截止电流 (ICEBO):-100nA - 发射极截止电流 (IEBO):-100nA - 集电极-发射极饱和电压 (VCE(sat)):-85mV - 直流电流增益 (hFE):270至680 - 过渡频率校正输出电容 (Cob):12pF
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