2SB852K

2SB852K Transistors High-gain Amplifier Transistor (−32V, −0.3A) 2SB852K Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. Packaging specifications Type Package hFE Marking Code Basic ordering unit (pieces) 2SB852K SMT3 B U∗ (2) External dimensions (Unit : mm) 2SB852K 2.9 0.4 (3) 1.1 0.8 (1) 1.6 2.8 0.95 0.95 0.15 1.9 T146 3000 (1)Emitter (2)Base (3)Collector Each lead has same dimensions ∗ Denotes hFE Circuit diagram C B RBE 4kΩ E : Emitter B : Base C : Collector E Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCES VEBO IC PC Tj Tstg Limits −40 −32 −6 −0.3 0.2 150 −55 to +150 Unit V V V A W °C °C ∗ Collector power dissipation Junction temperature Storage temperature ∗ RBE=0Ω Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance ∗1 Measured using pulse current. ∗2 Transition frequency of the device. Symbol BVCBO BVCES BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −40 −32 −6 − − 5000 − − − Typ. − − − − − − − 200 3 Max. − − − −1 −1 − −1.5 − − Unit V V V µA µA − V MHz pF Conditions IC= −100µA IC= −1mA IE= −100µA VCB= −24V VEB= −4.5V VCE= −5V, IC= −0.1A IC= −200mA, IB= −0.4mA ∗1 VCE= −5V, IE=10mA, f=100MHz ∗2 VCB= −10V, IE=0A, f=1MHz 0.3Min. Rev.B 1/2 2SB852K Transistors Electrical characteristic curves 125 POWER DISSIPATION : PC/PCMax (%) −500 VCE= −6V −100 COLLECTOR CURRENT : IC (mA) −10µA 100 −200 −100 Ta= −55°C Ta=25° C Ta=10 COLLECTOR CURRENT : IC (mA) −9µA −8µA −7µA Ta=25°C −80 75 −50 −20 −10 −5 −2 0°C −60 −6µA −5µA 50 −40 −4µA −3µA −2µA 25 −20 0 0 0 0 25 50 75 100 125 150 0 −0.4 IB=0 −0.8 −1.2 −1.6 −2.0 −2.4 −1 −2 −3 −4 −5 AMBIENT TEMPERATURE : Ta (°C) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Power dissipation curves Fig.2 Ground emitter propagation characteristisc Fig.3 Ground emitter output characteristics 100000 50000 DC CURRENT GAIN : hFE Ta=25°C DC CURRENT GAIN : hFE VCE= −5V −20 −10 IC/IB=500 20000 10000 5000 2000 1000 500 200 100 −2 −5 −10 −20 −50 −100 −200 −5V 50000 20000 10000 5000 2000 1000 500 1 Ta= DC CURRENT GAIN : hFE C 00 ° C 25° −5 VCE= −3V 5°C −5 −2 −1 −0.5 Ta= −55°C 25°C 100°C −0.2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −500 −1000 −2000 −0.1 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current 10000 5000 2000 1000 500 200 100 50 1 2 5 10 20 50 EMITTER INPUT CAPACITANCE : Cib (pF) TRANSISION FREQUWNCY : fT (MHz) OUTPUT CAPACITANCE : Cob (pF) Ta=25°C VCE= −5V 100 50 Ta=25°C f=1MHz IE=0A 20 10 Ta=25°C f=1MHz IE=0A 20 10 5 5 2 2 1 −1 −2 −5 −10 −20 −50 100 200 1 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1