2SC2389S

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. External dimensions (Unit : mm) 2SC4102 (1) 0.65 0.65 0.7 Absolute maximum ratings (Ta=25°C) Parameter 0.3 (3) 1.25 2.1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SC4102 / 2SC3906K dissipation 2SC2389S Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 120 120 5 50 0.2 0.3 150 −55 to +150 Unit V V V mA W 0.15 0.2 (2) 0.1Min. 0~0.1 Each lead has same dimensions °C °C ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SC3906K 0.95 0.95 1.9 2.9 Packaging specifications and hFE 0.4 Package hFE Marking Code Basic ordering unit (pieces) (3) 1.6 2.8 0.15 0.3Min. 0~0.1 ∗Denotes h FE Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 0.8 (1) Emitter (2) Base (3) Collector 2SC2389S 3 4 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta=25°C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 120 120 5 − − − 180 − − Typ. − − − − − − − 140 2.5 Max. − − − 0.5 0.5 0.5 560 − − Unit V V V µA µA V − MHz pF IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V IC/IB=10mA/1mA VCE=6V, IC=2mA VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Rev.A 1.1 T∗ T106 3000 T∗ T146 3000 (2) Type 2SC4102 UMT3 RS 2SC3906K SMT3 RS 2SC2389S SPT RS − TP 5000 (1) 0.9 1.3 (1) Emitter (2) Base (3) Collector 2.0 1/2 2SC4102 / 2SC3906K / 2SC2389S Transistors Electrical characteristics curves 10 25.0 22.5 COLLECTOR CURRENT : IC (mA) 50 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE=6V DC CURRENT GAIN : hFE Ta=25°C 500 5V 3V 8 20.0 17.5 6 15.0 12.5 200 VCE=1V 4 10.0 7.5 100 2 5.0 2.5 50 0 IB=0µA 4 8 12 Ta=25°C 16 20 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Ta=25°C 0.5 IC/IB=10 TRANSITION FREQUENCY : fT (MHz) 0.5 VCE=6V Ta=25°C 500 0.2 0.1 0.2 Ta=100°C 0.1 200 100 IC/IB=50 25°C −40°C 0.05 20 10 0.05 50 −0.5 −1 −2 −5 −10 −20 −50 0.02 1 2 5 10 20 50 0.02 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) Fig.6 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 20 10 Ta=25°C f=1MHz IE=0A 20 10 Ta=25°C f=1MHz IC=0A 5 5 2 1 2 1 −0.5 1 2 5 10 20 −0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Fig.8 Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1