2SC2411K
Datasheet
Medium Power Transistor (32V, 500mA)
l Outline
Parameter
Value
VCEO
32V
IC
500mA
SMT3
2SC2411K
SOT-346
l Features
1) High ICMAX
ICMAX=0.5A
2)Low V CE(sat)
Optimal for low voltage operation.
3)Complements the 2SA1036K.
l Inner circuit
l Application
DRIVING CIRCUIT, LOW FREQUENCY AMPLIFIER
l Packaging specifications
Part No.
Package
Package
size
2SC2411K
SMT3
2928
Taping
code
T146
Reel size Tape width
(mm)
(mm)
180
8
Basic
ordering
unit.(pcs)
Marking
3000
C
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© 2015 ROHM Co., Ltd. All rights reserved.
1/6
20150507 - Rev.002
2SC2411K
Datasheet
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Power dissipation
PD*1
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
Junction temperature
Range of storage temperature
l Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 100μA
40
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
32
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 100μA
5
-
-
V
Collector cut-off current
ICBO
VCB = 20V
-
-
1.0
μA
Emitter cut-off current
IEBO
VEB = 4V
-
-
1.0
μA
-
-
600
mV
Collector-emitter saturation voltage
VCE(sat) IC = 500mA, IB = 50mA
hFE
VCE = 3V, IC = 100mA
82
-
390
-
Transition frequency
fT
VCE = 5V, IE = -20mA,
f = 100MHz
-
250
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
6.5
-
pF
DC current gain
hFE values are calssified as follows :
rank
P
Q
R
-
-
hFE
82-180
120-270
180-390
-
-
*1 Each terminal mounted on a reference land
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© 2015 ROHM Co., Ltd. All rights reserved.
2/6
20150507 - Rev.002
2SC2411K
Datasheet
l Electrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Typical output characteristics
Fig.3 DC current gain vs.collector current(l)
Fig.4 DC current gain vs.collector current(ll)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/6
20150507 - Rev.002
2SC2411K
Datasheet
l Electrical characteristic curves(Ta = 25°C)
Fig.5 Collector-emitter saturation voltage
vs. collector current(l)
Fig.6 Collector-emitter saturation voltage
vs. collector current(ll)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Gain bandwidth product vs.
emitter current
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© 2015 ROHM Co., Ltd. All rights reserved.
4/6
20150507 - Rev.002
2SC2411K
Datasheet
l Electrical characteristic curves(Ta = 25°C)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base-voltage
Fig.10 Safe Operating Area
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© 2015 ROHM Co., Ltd. All rights reserved.
5/6
20150507 - Rev.002
2SC2411K
Datasheet
l Dimensions
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© 2015 ROHM Co., Ltd. All rights reserved.
6/6
20150507 - Rev.002
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