2SC2412K_09

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. Dimensions (Unit : mm) (1) 2SC2412K 2SC4081 (1) 2SC4617 0.65 0.65 (2) 0.95 0.95 1.9 2.9 1.3 2.0 (1) (2) 0.2 0.5 0.5 (3) 0.4 (3) 0.3 1.6 2.1 0.8 0.2 Structure Epitaxial planar type NPN silicon transistor 2.8 0.15 1.6 0.7 0.9 0.15 0.2 1.25 0.3 (3) 0.55 0.15 0.8 1.1 0~0.1 0.3Min. Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector 0~0.1 0.1Min. 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 (1) Emitter (2) Base (3) Collector 0~0.1 ROHM : EMT3 (1) Emitter (2) Base (3) Collector EIAJ : SC-75A JEDEC : SOT-416 Abbreviated symbol: B* Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 0.2 1.2 0.8 (2) (3) (1) 2SC1740S 4±0.2 2±0.2 3±0.2 0.2 1.2 0.32 0.4 0.4 0.8 0.22 (15Min.) 0.13 0~0.1 0.5 0.45+0.15 −0.05 0.15Max. 5 3Min. 2.5 +0.4 −0.1 0.5 +0.15 0.45 −0.05 (1) (2) (3) ROHM : VMT3 (1) Base (2) Emitter (3) Collector ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Abbreviated symbol: B* * Denotes hFE Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S Junction temperature Storage temperature PC Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 0.2 0.15 0.3 Tj Tstg 150 −55 to +150 °C °C W Unit V V V A Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − Typ. − − − − − − − 180 2 Max. − − − 0.1 0.1 390 0.4 − 3.5 Unit V V V μA μA − V MHz pF IC=50μA IC=1mA IE=50μA VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz Conditions www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.C 0.7 1.0 1.6 (2) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Packaging specifications and hFE Package Code Type 2SC2412K 2SC4081 2SC4617 2SC5658 2SC1740S hFE QR QR QR QR QR − − − − − − − − − − Basic ordering unit (pieces) T146 3000 T106 3000 − Taping TL 3000 − − T2L 8000 − − − TP 5000 − − − − Data Sheet hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characterristic curves 50 COLLECTOR CURRENT : IC (mA) 100 COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC (mA) Ta=25°C 20 10 5 Ta=100°C 80 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 10 Ta=25°C 30μA 27μA 24μA 21μA 8 25°C −55°C 60 0.25mA 0.20mA 6 18μA 15μA 12μA 9μA 6μA 3μA 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 4 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C DC CURRENT GAIN : hFE 500 Ta=100°C VCE=5V 0.5 Ta=25°C DC CURRENT GAIN : hFE 200 VCE=5V 3V 1V 200 25°C −55°C 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig. 6 Collector-emitter saturation voltage vs. collector current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Data Sheet COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 TRANSITION FREQUENCY : fT (MHz) IC/IB=10 0.5 IC/IB=50 Ta=100°C 25°C −55°C 500 Ta=25°C VCE=6V 0.2 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.1 0.05 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.9 Gain bandwidth product vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 10 Cib Ta=25°C f=1MHz IE=0A IC=0A 200 Ta=25°C f=32MHZ VCB=6V 100 5 50 2 Co 20 b 1 0.2 0.5 1 2 5 10 20 50 10 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Base-collector time constant vs. emitter current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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