2SC3415S

2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F !Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. !External dimensions (Units: mm) (1) 2SC4061K 0.4 (3) 1.6 2.8 0.95 0.95 (2) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SC4061K Collector power dissipation 2SC3415S 2SC4015 2SC3271F Junction temperature Storage temperature Tj Tstg 2 ROHM : SMT3 EIAJ : SC-59 Unit V V V mA 0.3to0.6 0to0.1 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) Each lead has same dimensions 0.15 Symbol VCBO VCEO VEBO IC Limits 300 300 5 100 0.2 0.3 1 1.2 5 150 -55~+150 or larger. 2SC3415S 3 4 2 PC * W (15Min.) 3Min. 0.45 0.8 W(Tc=25˚C) ˚C ˚C 2.5 5 0.5 0.45 (1) Emitter (2) Collector (3) Base * Printed circuit board 1.7mm thick, collector plating 1cm ROHM : SPT EIAJ : SC-72 (1) (2) (3) Taping specifications !Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4061K 2SC3415S 2SC4015 2SC3271F SMT3 NP AN T146 3000 SPT NP TP 5000 ATV N TV2 2500 TO-126FP N 1000 2SC4015 6.8 2.5 0.65Max. 0.5 (1) (2) (3) 14.5 * 1.0 0.9 4.4 * Denotes h FE ROHM : ATV 2.54 2.54 1.05 0.45 (1) Emitter (2) Collector (3) Base Taping specifications 2SC3271F 10.8 7.8 Tor φ 3.3 Rear φ 3.19 6.9 9.2 3.2 1.1 1.2 1.6 C0.7 16.0 1.75 0.95 0.8 2.3 2.3 (1) (2) (3) 0.7 1.76 (1) Emitter (2) Collector (3) Base ROHM : TO-126FP !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SC4061K, 2SC3415S DC current transfer ratio 2SC4015, 2SC3271F Gain bandwidth product Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 300 300 5 56 56 50 Typ. 100 3 Max. 0.5 0.5 2 180 120 Unit V V V µA µA V MHz pF IC=50µA IC=100µA IE=50µA VCB=200V VEB=4V IC/IB=50mA/5mA VCE/IC=10V/10mA VCE=30V, IE=-10mA, f=100MHz VCB=30V, IE=0A, f=1MHz Conditions