2SC4102

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. !External dimensions (Units : mm) 2SC4102 (1) 0.65 0.65 0.7 0.8 0.3 (3) 1.25 0.2 !Absolute maximum ratings (Ta=25°C) 0.15 2.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SC4102 / 2SC3906K dissipation 2SC2389S Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 120 120 5 50 0.2 0.3 150 −55~+150 Unit V V V mA W (2) 0.1Min. 0~0.1 Each lead has same dimensions °C °C ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SC3906K (1) 0.4 Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4102 UMT3 RS T∗ T106 3000 2SC3906K SMT3 RS T∗ T146 3000 2SC2389S SPT RS − TP 5000 (3) 1.6 2.8 0.15 (2) !Packaging specifications and hFE ∗Denotes h 0.3Min. FE 0~0.1 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 (1) Emitter (2) Base (3) Collector 2SC2389S 3 4 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base !Electrical characteristics (Ta=25°C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 120 120 5 − − − 180 − − Typ. − − − − − − − 140 2.5 Max. − − − 0.5 0.5 0.5 560 − − Unit V V V µA µA V − MHz pF IC=50µA IC=1mA IE=50µA VCB=100V VEB=4V IC/IB=10mA/1mA VCE=6V, IC=2mA VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance 1.1 0.95 0.95 1.9 2.9 0.9 1.3 (1) Emitter (2) Base (3) Collector 2.0