2SC4132T100Q

2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation ICP 2SC4132 2SD1857 Junction temperature Storage temperature *1 *2 2SD1857 6.8 2.5 *1 *2 0.65Max. 0.5 4.4 Emitter-base voltage V V V A A 0.9 Unit 120 120 5 2 3 0.5 1.0 Limits VCBO VCEO 14.5 Symbol (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 Collector-base voltage Collector-emitter voltage 1.5 1.5 0.4 (3) zAbsolute maximum ratings (Ta = 25°C) Parameter 4.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. (1) (2) (3) 2.54 2.54 Single pulse Pw = 10ms When mounted on a 40 × 40 × 0.7mm ceramic board. 1.05 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base zPackaging specifications and hFE Type 2SC4132 2SD1857 Package hFE MPT3 PQR ATV PQR Marking Code CB T100 1000 * − TV2 2500 Basic ordering unit (pieces) * Denotes h FE zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio BVCBO BVCEO 120 120 5 − − − − 1 V V V µA VCB = 100V − − − − − − − − 1 2 µA V VEB = 4V IC/IB = 1A/0.1A − 80 20 390 − − − MHz pF * 82 − − VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz * Transition frequency Output capacitance * Measured using pulse current. BVEBO ICBO IEBO VCE(sat) hFE fT Cob Conditions IC = 50µA IC = 1mA IE = 50µA 1/1