2SC4774_09

High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 1) Very low output-on resistance (Ron). 2) Low capacitance. Dimensions (Unit : mm) 2SC4774 2.0 0.3 (3) 0.9 0.2 0.7 1.25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 12 6 3 50 0.2 150 −55 to +150 Unit V V V mA W °C °C (2) (1) 2.1 Absolute maximum ratings (Ta=25C) 0.65 0.65 1.3 0.15 Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector 2SC4713K Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) FE 2.9 1.1 0.4 0.8 2SC4774 UMT3 S 2SC4713K SMT3 S (3) ∗Denotes h 0.95 0.95 0.15 1.9 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output-on resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron Min. 12 6 3 − − − 180 300 − − Typ. − − − − − − − 800 1 2 Max. − − − 0.5 0.5 0.3 560 − 1.7 − Unit V V V μA μA V − MHz pF Ω IC=10μA IC=1mA IE=10μA VCB=10V VEB=2V IC/IB=10mA/1mA VCE/IC=5V/5mA VCE=5V, IE= −10mA, f=200MHz VCB=10V, IE=0A, f=1MHz IB=3mA, VI=100mVrms, f=500kHz Conditions This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.C 0.3Min. BM∗ T106 3000 BM∗ T146 3000 (2) (1) 1.6 2.8 0.1Min. 2SC4774 / 2SC4713K Electrical characteristic curves 10 125°C Data Sheet COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 8 25mA 40 1.0 m 30mA COLLECTOR CURRENT : IC (mA) 0.2mA 40 6 20mA 15mA 30 0.1mA 30 4 10mA 20 20 2 5mA 10 IB=0mA 0.4 0.5 10 0 0 1 2 3 IB=0μA 4 5 0 0 0.1 0.2 0.3 0 0 0.4 0.8 −25°C A 25°C Ta=25°C 35mA 50 Ta=25°C mA A 0.5 0.4m 0.3mA 50 VCE=5V 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) DC CURRENT TRANSFER RATIO : hFE 500 Ta=25°C VCE=5V 500 Ta=25°C IC/IB=10 GAIN BANDWIDTH PRODUCT : fT (MHz) 1000 1000 2000 1000 500 Ta=25°C VCE=5V 200 100 50 200 100 50 20 10 200 100 50 20 10 0.1 0.2 5 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 20 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation Fig.6 Gain bandwidth product vs. voltage vs. collector current collector current 20 FEEDBACK CAPACITIANCE : Cre (pF) OUTPUT CAPACITANCE : Cob (pF) 10 5 Ta=25°C f=1MHz 50 20 10 5 Ta=25°C f=1MHz ON RESISTANE : Ron (Ω) 20 10 5 Ta=25°C f=500kHz υi=100mVrms RL=1kΩ 2 1 0.5 2 1 0.5 2 0.2 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.1 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) Fig.7 Collector output capacitance vs. voltage Fig.8 Back capacitance voltage Fig.9 Output-on resistance vs. base current www.rohm.com c ○ 2009 ROHM Co., Ltd. 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