2SC5103

High speed switching transistor (60V, 5A) 2SC5103 Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 s at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. Dimensions (Unit : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms 1.5 2.5 9.5 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 100 60 5 5 10 1 10 150 −55 to +150 Unit V V V A(DC) A(Pulse) ∗ W W(Tc=25°C) °C °C ROHM : CPT3 EIAJ : SC-63 Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5103 CPT3 Q TL 2500 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob ton tstg tf Min. 100 60 5 − − − − − − 120 40 − − − − − Typ. − − − − − 0.15 − − − − − 120 80 − − 0.1 Max. − − − 10 10 0.3 0.5 1.2 1.5 270 − − − 0.3 1.5 0.3 Unit V V V μA μA V V V V − − MHz pF μs μs μs Conditions IC = 50μA IC = 1mA IE = 50μA VCB = 100V VEB = 5V IC/IB = 3A/0.15A IC/IB = 4A/0.2A IC/IB = 3A/0.15A IC/IB = 4A/0.2A VCE/IC = 2V/1A VCE/IC = 2V/3A VCB = 10V , IE = −0.5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10Ω IB1 = −IB2 = 0.15A VCC 30V ∗ ∗ ∗ ∗ Transition frequency Output capacitance Turn-on time Storage time Fall time ∗ Measured using pulse current. ∗ www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2.3 0.8Min. (1) Base (2) Collector (3) Emitter 1/3 2009.12 - Rev.A 2SC5103 Electrical characteristics curves 5 Data Sheet COLLECTOR CURRENT : IC (A) 50 m A 45mA 40mA 35mA COLLECTOR CURRENT : IC (A) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0 0.2 0.4 0.6 0.8 1.0 Ta=1 00°C 25°C −25°C VCE= 2V 1000 500 VCE=2V DC CURRENT GAIN : hFE 4 30mA 200 100 50 20 10 5 2 1 0.01 0.02 Ta=100°C 25°C −25°C 25mA 3 20mA 15mA 10mA 2 1 IB= 5mA 0 0 1 2 3 Ta=25°C 4 5 1.2 1.4 1.6 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR OUTPUT CAPACITWANCE : Cob(pF) 10 5 2 1 0.5 25°C 0.2 0.1 0.05 IC/IB=20 TRANSITION FREQUENCY : fT(MHz) 1000 500 200 100 50 20 10 5 2 1 −0.001 −0.002 10000 5000 2000 1000 500 200 100 50 20 10 0.1 0.2 Ta=25°C VCE=10V Ta=25°C IE=0A f=1MHz Ta= −25°C 100°C VBE(sat) Ta=100°C 0.02 0.01 0.01 0.02 −25°C 0.05 0.1 0.2 25°C 1 2 VCE(sat) 5 10 0.5 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (A ) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage Base-emitter saturation voltage −collector current Fig.5 Gain bandwidth product vs.emitter current Fig.6 Collector output capacitance vs. collector-base voltage TRANSIENT THERMAL RESISTANCE : Rth(°C/W) 10 5 TURN ON TIME : ton (μs) STRAGE TIME : tstg (μs) FALL TIME : tf (μs) IC=20 IB1= −20 IB2 PULSE COLLECTOR CURRENT : IC (A) 10 5 Ic MAX (Pulse∗) DC 10000 1000 Pw=100ms∗ 10ms∗ (1)Using infinite heat sink (2)Unmounted 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.05 ton tstg 2 1 0.5 (2) 100 (1) 10 1 0.1 0.01 0.001 tf 0.2 0.1 0.2 0.5 1 2 5 10 Tc=25°C 0.1 ∗Single nonrepetitive 0.05 pulse 0.5 1 2 5 10 20 50 100 0.01 0.1 1 TIME : t (s) 10 100 1000 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Switching characteristics Fig.8 Safe operating area Fig.9 Transient thermal resistance www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.A 2SC5103 RL=10Ω IB VIN IB1 T.U.T. IB2 PW PW=50μs duty cycle 10% Data Sheet IC IB1 IB2 − VCC ∼ 30V IC 90% IC 1% −VBB ton tstg tf Fig.10 Switching characteristic circuit www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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