2SC5103TLP

2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation Junction temperature Storage temperature PC Tj Tstg Limits 100 60 5 5 10 1 10 150 −55~+150 5.1 6.5 2.3 0.65 C0.5 0.5 0.8Min. 1.5 2.5 9.5 Unit V V V A(DC) A(Pulse) ∗ W W(Tc=25°C) °C °C ∗ Single pulse Pw=100ms !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5103 CPT3 PQ TL 2500 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) 100 60 5 − − − − − − 82 − − − − − − − − − − 0.15 − − − − 120 80 − − 0.1 − − − 10 10 0.3 0.5 1.2 1.5 270 − − 0.3 1.5 0.3 V V V µA µA V V V V − MHz pF µs µs µs Parameter DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time ∗ Measured using pulse current. hFE fT Cob ton tstg tf Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 100V VEB = 5V IC/IB = 3A/0.15A IC/IB = 4A/0.2A IC/IB = 3A/0.15A IC/IB = 4A/0.2A VCE/IC = 2V/1A VCB = 10V , IE = 0.5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10Ω IB1 = −IB2 = 0.15A VCC 30V ∗ ∗ ∗ ∗ ∗ 2.3 0.9 1.5 5.5 0.9 2.3 (3) (2) (1) 1.0 0.5 ROHM : CPT3 EIAJ : SC-63 0.75 !External dimensions (Units : mm) !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)