Power transistor (60V, 3A)
2SC5824
Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. Dimensions (Unit : mm)
MPT3
Applications Low frequency amplifier High speed switching
(1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse)
Each lead has same dimensions
Abbreviated symbol : UP
Structure NPN Silicon epitaxial planar transistor
Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SC5824 Taping T100 1000
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Power dissipation PC Junction temperature Range of storage temperature
∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits 60 60 6 3 6 500 2.0 150 −55 to +150
Unit V V V A A mW W °C °C
∗1 ∗2 ∗3
Tj Tstg
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.C
2SC5824
Electrical characteristics (Ta=25C)
Parameter Collector−base breakdown voltage Emitter−base breakdown voltage Collector cut-off current Emitter cut-off current Collector−emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol BVCBO Min. 60 60 6 − − − 120 − − − − − Typ. − − − − − 200 − 200 20 50 150 30 Max. − − − 1.0 1.0 500 390 − − − − − Unit V V V μA μA mV − MHz pF ns ns ns IC=100μA IC=1mA IE=100μA VCB=40V VEB=4V IC=2A, IB=200mA
∗1
Data Sheet
Conditions
Collector−emitter breakdown voltage BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ton tstg tf
VCE=2V, IC=100mA VCE=10V, IE= −100mA, f=10MHz ∗1 VCB=10V, IE=0mA, f=1MHz IC=3A, IB1=300mA IB2= −300mA VCC 25V ∗2
∗1 Non repetitive pulse ∗2 See switching charactaristics measurement circuits
hFE RANK
Q 120-270 R 180-390
Electrical characteristic curves
10
VCE=2V
1000
1000
Ta=25°C
VCE=2V
COLLECTOR CURRENT : IC (A)
Ta=125°C
VCE=5V
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
1 Ta=100°C Ta= −40°C
100
VCE=3V
100
Ta= −40°C
Ta=25°C
Ta=100°C
10
0.1
Ta=25°C
10
VCE=2V
Ta=125°C
0.01 0 0.5 1 1.5 2
BASE TO EMITTER VOLTAGE : VBE (V)
1 0.001
0.01
0.1
1
10
1 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter propagation characteristics
Fig.2 DC current gain vs. collector current
Fig.3 DC current gain vs. collector current
10
Ta=25°C
10
IC/IB=10/1
10
IC/IB=10/1
COLLECTOR SATURATION VOLTAGE : VCE (sat)(V)
Ta=125°C
1
1
BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Ta=100°C
Ta= −40°C Ta=25°C
1
0.1
IC/IB=20/1 IC/IB=10/1
0.1
Ta=25°C Ta= −40°C
Ta=100°C
Ta=125°C
0.01 0.001
0.01
0.1
1
10
0.01 0.001
0.01
0.1
1
10
0.1 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Collector-emitter saturation voltage vs. Collector Current
Fig.6 Base-emitter saturation voltage vs. collector current
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.03 - Rev.C
2SC5824
Data Sheet
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
TRANSITION FREQUENCY : FT (MHz)
Ta=25°C VCE=10V
100
1000
Ta=25°C f=1MHz
tstg
Ta=25°C VCC=25V IC/IB=10/1
100
SWITCHING TIME (ns)
10
100
ton
10
tf
1 −0.001
−0.01
−0.1
−1
− 10
1 0.1
1
10
100
10 0.01
0.1
1
10
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR CURRENT : IC (A)
Fig.7 Transition frequency
Fig.8 Collector output capacitance
Fig.9 Switching Time
Switching characteristics measurement circuits
RL=8.3Ω VIN IB1 IC VCC 25V IB2 1%
PW PW 50 S Duty cycle
IB1 Base current waveform 90% Collector current waveform ton IC 10% tstg tf IB2
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.03 - Rev.C
Notice
Notes
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R1120A
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