2SC5825_11

Power transistor (60V, 3A) 2SC5825 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2072. Applications Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Type 2SC5825 Dimensions (Unit : mm) CPT3 (SC-63) (1) Base (2) Collector (3) Emitter Each lead has same dimensions Abbreviated symbol : C5825 Taping TL 2500 Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO Continuous Pulsed IC ICP PC Limits 60 60 6 3 6 1.0 10.0 150 −55 to 150 Unit V V V A A W W °C °C ∗1 ∗2 ∗3 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land ∗3 Tc=25°C Tj Tstg www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.10 - Rev.D 2SC5825 Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V μA μA Condition IC=1mA IC=100μA IE=100μA VCB=40V VEB=4V IC=2A IB=200mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=3A IB1=300mA IB2= −300mA VCC 25V Data Sheet Collector-emitter saturation voltage DC current gain Transition frequency VCE (sat) hFE fT − 120 200 500 390 mV ∗1 − 200 − MHz ∗1 − − Corrector output capacitance Turn-on time Storage time Fall time Cob Ton Tstg Tf − − − − 20 50 150 30 − − − − pF ns ns ns ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement cicuits hFE RANK Q 120−270 R 180−390 Electrical characteristic curves 1000 Tstg DC CURRENT GAIN : hFE 100 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) Ta=25°C VCC=25V IC / IB=10 / 1 1000 VCE=2V 1000 Ta=25°C 100 Ton Tf Ta=125°C Ta=25°C Ta= −40°C 100 VCE=5V VCE=3V VCE=2V 10 10 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 100 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Switching Time Fig.2 DC Current Gain vs. Collector Current (Ι) Fig.3 DC Current Gain vs. Collector Current (ΙΙ) 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 Ta=25°C 10 IC / IB=10 / 1 1 Ta=125°C Ta=25°C Ta= −40°C 1 IC / IB=20 / 1 IC / IB=10 / 1 BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1 0.1 0.1 Ta=125°C Ta=25°C Ta= −40°C 0.01 0.001 0.01 0.1 1 10 100 0.01 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Fig.6 Base-Emitter Saturation Voltage vs.Collecter Current www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.10 - Rev.D 2SC5825 10 Data Sheet TRANSITION FREQUENCY : fT (MHz) VCE=2V 1000 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=10V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Ta=25°C f=1MHz 1 Ta=125°C Ta=25°C Ta= −40°C 100 10 0.1 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 1 0.1 1 10 100 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.7 Grounded Emitter Propagation Characteristics Fig.8 Transition Frequency Fig.9 Collector Output Capacitance Switching characteristics measurement circuits RL=8.3Ω VIN IB1 IC VCC 25V IB2 1% PW PW 50 S Duty cycle IB1 Base current waveform 90% Collector current waveform Ton 10% Tstg Tf IC IB2 www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.10 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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