2SC5880_11

Power transistor (60V, 2A) 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 Dimensions (Unit : mm) ATV Applications Low frequency amplifier High speed switching (1) Emitter (2) Collector (3) Base Taping specifications Symbol : C5880 Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Type Taping TV2 2500 Code Basic ordering unit (pieces) 2SC5880 Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 2 4 1.0 150 −55 to 150 Unit V V V A A W °C °C ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗Pw=10ms Pulsed tj tstg www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.C 2SC5880 Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V μA μA Condition IC=1mA IC=100μA IE=100μA VCB=40V VEB=4V IC=1.0A IB=0.1A VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=2A IB1=200mA IB2= −200mA VCC 25V Data Sheet Collector-emitter saturation voltage DC current gain VCE (sat) hFE − 120 200 500 390 mV − − ∗ Transition frequency fT − 200 − MHz Corrector output capacitance Turn-on time Storage time Fall time ∗Non repetitive pulse Cob ton tstg tf − − − − 10 50 120 35 − − − − pF ns ns ns hFE RANK Q 120−270 R 180−390 Electrical characteristic curves 10 VCE=2V 1000 Ta=25°C 1000 VCE=2V COLLECTOR CURRENT : IC (A) 1 Ta=125°C Ta=25°C Ta= −40°C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 100 VCE=5V VCE=3V VCE=2V 100 Ta=125°C Ta=25°C Ta= −40°C 0.1 10 10 0.01 0 0.5 1 1.5 1 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current (Ι) Fig.3 DC Current Gain vs. Collector Current (ΙΙ) 10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 IC / IB=10 / 1 10 IC / IB=10 / 1 BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1 IC / IB=20 / 1 IC / IB=10 / 1 1 Ta=125°C Ta=25°C Ta= −40°C 1 0.1 0.1 0.1 Ta=125°C Ta=25°C Ta= −40°C 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Fig.6 Base-Emitter Saturation Voltage vs. Collecter Current www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.C 2SC5880 Data Sheet 1000 TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=10V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Ta=25°C f=1MHz 1000 tstg 100 SWITCHING TIME : (ns) Ta=25°C VCC=25V IC / IB=10 / 1 10 100 tf ton 10 1 0.001 0.01 0.1 1 10 1 0.1 1 10 100 10 0.01 0.1 1 10 EMITTER CURRENT : IE (A) BASE TO COLLECTOR VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A) Fig.7 Transition Frequency Fig.8 Collector Output Capacitance Fig.9 Switching Time Switching characteristics measurement circuits RL=12.5Ω VIN IB1 IC VCC 25V IB2 PW PW 50 S Duty cycle ≤ 1% IB1 Base current waveform 90% Collector current waveform ton IC 10% tstg tf IB2 www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A