2SCR522EB

General purpose transistor(20V,0.2A) 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) 2SCR522M 2SCR522EB 2SCR522UB VMT3 Taping T2L 8000 EMT3F Taping TL 3000 UMT3F Taping TL UMT3F 2.0 (1) Dimensions (Unit : mm) VMT3 Abbreviated symbol : NC EMT3F (3) (2) Abbreviated symbol : NC 0.425 (3) 1.25 2.1 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : NC  Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation 2SCR522UB Junction temperature Range of storage temperature 2SCR522M,2SCR522EB Inner circuit Limits 20 20 5 200 400 150 200 150 −55 to +150 Unit V V V mA mA mW mW °C °C (2) (1) (3) Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg ∗1 ∗2 (1) Base (2) Emitter (3) Collector ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 20 20 5 − − − 120 − − Typ. − − − − − 0.12 − 400 2 Max. − − − 0.1 0.1 0.30 560 − − Unit V V V μA μA V − MHz pF IC=1mA IC=50μA IE=50μA VCB=20V VEB=5V IC=100mA, IB=10mA VCE=2V, IC=1mA VCE=10V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 0.53 0.425 0.53 3000 0.32 0.9 1/2 2010.09 - Rev.A 2SCR522M / 2SCR522EB / 2SCR522UB Electrical characteristics curves IB=1.0mA IB=0.9mA IB=0.8mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Data Sheet 1000 100 10 1 0.1 0.01 0 VCE =2V Ta=125°C 25°C -55°C 100 IB=0.7mA IB=0.5mA 60 40 20 0 IB=0.4mA IB=0.3mA IB=0.2mA IB=0.1mA DC CURENT GAIN : hFE 1000 VCE=2V 80 IB=0.6mA 100 Ta=25°C 0 1 2 3 4 5 IB=0mA Ta=125°C 25°C -55°C 10 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 0.2 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) TRANSITION FREQUENCY :fT (MHz) 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C 1 IC/IB= 10/1 Ta=125°C 25°C -55°C 1000 VCE = 10V Ta=25°C IC/IB = 20/1 IC/IB =10/1 0.1 0.1 100 0.01 1 10 100 1000 0.01 1 10 100 1000 10 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) 100 Cib 10 Cob (pF) Cib (pF) 1 Cob 0 Ta=25°C f=1MHz IE=0 IC=0 0.01 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c ○ 2010 ROHM Co., Ltd. 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