2SCR523V1T2L

PRODUCTS VML0806 TYPE 2SCR523V1 1. TYPE 2SCR523V1 2. STRUCTURE NPN SILICON EPITAXIAL PLANAR TRANSISTOR 3. APPLICATIONS GENERAL PURPOSE SMALL SIGNAL AMPLIFIER 4. ABSOLUTE MAXIMUM RATINGS PAGE 1/2 [Ta=25ºC] COLLECTOR-BASE VOLTAGE VCBO ... 50V COLLECTOR-EMITTER VOLTAGE VCEO ... 50V EMITTER-BASE VOLTAGE VEBO ... 5V COLLECTOR CURRENT IC ... 100mA ICP ... 200mA PW=10ms SINGLE PULSE POWER DISSIPATION PD ... 100mW * EACH TERMINAL MOUNTED ON A REFERENCE LAND DESIGN JUNCTION TEMPERATURE Tj ... 150ºC RANGE OF STORAGE TEMPERATURE Tstg ... -55~150ºC CHECK APPROVAL DATE： 23/ JUL / 2012 REV.： 0 TSZ22111･04･002 SPECIFICATION No. TSQ03131-2SCR523V1 PRODUCTS VML0806 5. TYPE PAGE 2/2 2SCR523V1 ELECTRICAL CHARACTERISTICS [Ta=25ºC] PARAMETER SYMBOL CONDITION MIN. TYP. MAX. COLLECTOR-EMITTER BREAKDOWN VOLTAGE BVCEO IC=1mA 50V - - COLLECTOR-BASE BREAKDOWN VOLTAGE BVCBO IC=50μA 50V - - EMITTER-BASE BREAKDOWN VOLTAGE BVEBO IE=50μA 5V - - COLLECTOR CUT-OFF CURRENT ICBO VCB=50V - - 0.1μA EMITTER CUT-OFF CURRENT IEBO VEB=5V - - 0.1μA VCE(sat) IC=50mA / IB=5mA - 0.10V 0.30V DC CURRENT GAIN hFE VCE=6V / IC=1mA 120 - 560 TRANSITION FREQUENCY fT VCE=10V / IE=-10mA f=100MHz - 350MHz - OUTPUT CAPACITANCE Cob VCB=10V / IE=0A f=1MHz - 1.6pF - COLLECTOR-EMITTER SATURATION VOLTAGE 6. INTERNAL CIRCUIT TOP VIEW (3) (1) (1) (2) 7. (3) (1) BASE (2) EMITTER (3) COLLECTOR (2) MARKING NB “ NB “ MEANS 2SCR523V1 REV.： 0 TSZ22111･05･002 SPECIFICATION No.：TSQ03131-2SCR523V1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: 2SCR523V1T2L