2SCR544R_11

Midium Power Transistors (80V / 2.5A) 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching  Applications Driver  Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SCR544R   Absolute maximum ratings (Ta = 25°C) Symbol Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) (1) Base (2) Emitter (3) Collector  Dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 (3) 1.6 2.8 0.85 0.7 0~0.1 0.3~0.6 (1) (2) 0.95 0.95 1.9 0.16 Abbreviated symbol : NS  Inner circuit (Unit : mm) (3) (1) Limits 80 80 6 2.5 5 Unit V V V A A W W °C °C DC Pulsed VCBO VCEO VEBO IC ICP *1 (1) Base (2) Emitter (3) Collector (2) PD *2 0.5 PD *3 1 Tj 150 Tstg -55 to 150 www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2010.02 - Rev.A 2SCR544R  Electrical characteristic (Ta = 25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 See switching time test circuit Data Sheet Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ton *1 tstg *1 t f *1 Min. 80 80 6 120 - Typ. 100 280 16 50 700 40 Max. 1 1 300 390 - Unit V V V μA μA - Conditions IC= 1ｍA IC= 100μA IE= 100μA VCB= 80V VEB= 4V VCE= 3V, IC= 100mA mV IC= 1A, IB= 50mA VCE= 10V MHz IE=-500mA, f=100MHz pF ns ns ns VCB= 10V, IE=0A f=1MHｚ IC= 1.3A,IB1= 130mA, _ IB2=-130mA,VCC ~ 10V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2010.02 - Rev.A 2SCR544R Electrical characteristics curves 5mA 3mA Data Sheet 0.50 COLLECTOR CURRENT : IC[A] 2.5mA 2.0mA DC CURRENT GAIN : hFE 1000 Ta=25°C DC CURRENT GAIN : hFE 1000 VCE = 3V 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 0.5 1 1.5 1.5mA 100 1.0mA VCE = 5V 3V 100 Ta=125°C 75°C 25°C -40°C 0.5mA Ta=25°C 10 2 1 10 100 1000 10000 10 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.1 Typical Output Characteristics COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 1 1 Ta=25°C IC/IB=20 COLLECTOR CURRENT : IC [mA] 10000 VCE = 3V 1000 0.1 0.1 Ta=125°C 75°C 25°C -40°C 0.01 IC/IB=50 20 10 0.01 Ta=125°C 75°C 25°C -40°C 100 10 0.001 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] 0.001 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] 1 0 0.5 1 1.5 BASE TO EMITTER VOLTAGE : VBE[V] Fig.6 Ground Emitter Propagation Characteristics COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 1000 EMITTER INPUT CAPACITANCE : Cib(pF) Cib 100 TRANSITION FREQUENCY : fT[MHz] Ta=25°C f=1MHz IE=0A IC=0A 1000 Ta=25°C VCE=10V 100 10 Cob 1 0.1 1 10 100 10 10 100 EMITTER CURRENT : IE[mA] Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2010.02 - Rev.A 2SCR544R Switching time test circuit RL=7.5Ω VIN IB1 IC IB2 Pw Pw Data Sheet VCC _ ~10V ~ 50μs _ DUTY CYCLE≤1% IB1 BASE CURENT WAVEFORM IB2 ton 90% COLLECTOR CURRENT WAVEFORM 10% tstg tf IC www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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