High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Packaging specifications
Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1383K SMT3 B W∗ T146 3000
(1)Emitter (2)Base (3)Collector Each lead has same dimensions
Dimensions (Unit : mm)
2SD1383K
∗ Denotes hFE
Circuit diagram
C
B
RBE
4kΩ
E : Emitter B : Base C : Collector
E
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
∗1 RBE=0Ω ∗2 Single pulse Pw=10ms
Symbol VCBO VCES VEBO IC PC Tj Tstg
Limits 40 32 6 0.3 1.5 0.2 150 −55 to +150
Unit V ∗1 V V A (DC) A (Pulse) ∗2 W °C °C
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance
∗1 Measured using pulse current. ∗2 Transition frequency of the device.
Symbol BVCBO BVCES BVEBO ICBO IEBO hFE VCE(sat) fT Cob
Min. 40 32 6 − − 5000 − − −
Typ. − − − − − − − 250 3
Max. − − − 1 1 − 1.5 − −
Unit V V V μA μA − V MHz pF
Conditions IC=100μA IC= −1mA , RBE=0Ω IE=100μA VCB=24V VEB=4.5V VCE=5V, IC=0.1A IC=200mA, IB=0.4mA
∗1
VCE=5V, IE= −10mA, f=100MHz ∗2 VCB=10V, IE=0A, f=1MHz
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1/2
2011.10 - Rev.D
2SD1383K
Electrical characteristic curves
125
Data Sheet
500
COLLECTOR CURRENT : IC (mA)
POWER DISSIPATION : PC/PCMax (%)
VCE=6V
COLLECTOR CURRENT : IC (mA)
100
IB=10μA
Ta=25°C
100
200 100
Ta=25°C
Ta= −55°C
9μA 8μA
50
75
50 20 10 5 2
Ta=100°C
7μA 6μA
5μA
4μA
50
25 0 0
0
25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (°C)
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 0
1
3μA 2
3
4
5
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Power dissipation curves
Fig.2 Ground emitter propagation characteristisc
Fig.3 Ground emitter output characteristics
Ta=25°C 50000
DC CURRENT GAIN : hFE
VCE=5V
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
IC/IB=500 2
Ta= −55°C
20000 10000 5000 2000 1000 500 5 10 20 50 100 200 VCE=3V
5V
100000 50000 20000 10000 5000
Ta =1
°C 00 °C 25
1 0.5
100°C
C −55°
25°C
0.2
500 1000 2000
5
10
20
50 100
200
500 1000 2000
0.1 0.5
1
2
5
100
200
500 1000
2000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
Fig.5 DC current gain vs. collector current ( ΙΙ )
Fig.6 Collector-emitter saturation voltage vs. collector current
EMITTER INPUT CAPACITANCE : Cib (pF)
TRANSISION FREQUWNCY : fT (MHz)
OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C VCE=6V
500
Ta=25°C f=1MHz IE=0A
20 10
Ta=25°C f=1MHz IE=0A
20 10 5
200 100
5
50
2
2
−1
−2
−5
−10
−20
−50 −100
1
2
5
10
20
50
1
1
2
5
10
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Collector output capacitance vs. collector-base voltage
Fig.9 Emitter input capacitance vs. emitter-base voltage
www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.10 - Rev.D
Notice
Notes
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R1120A
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