Muting Transistor (15V, 1A)
2SD1468S
Dimensions (Unit : mm)
Features
1) Low saturation voltage, typically VCE(sat) = 0.08V at
Ic / IB = 500mA / 500A.
2) Ideal for low voltage, high current drives.
3) High DC current gain and high current.
SPT
2.0
(15Min.)
3Min.
3.0
4.0
0.45
2.5
0.5
0.45
5.0
(1) (2) (3)
(1)Emitter
(2)Collector
Taping specifications
(3)Base
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
VCES
VEBO
IC
30
15
5
1
V
V
V
A
PC
Tj
0.3
150
Tstg
−55 to +150
W
°C
°C
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Parameter
BVCBO
BVCEO
BVEBO
30
15
5
−
−
−
−
−
−
V
V
V
IC=50μA
IC=1mA
IE=50μA
Conditions
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
ICBO
IEBO
VCE(sat)
−
−
−
−
−
0.08
0.5
0.5
0.4
μA
μA
V
VCB=20V
VEB=4V
IC/IB=0.5mA/50mA
DC current transfer ratio
hFE
120
−
390
−
Transition frequency
fT
50
150
−
MHz
Output capacitance
Cob
−
15
30
pF
VCE/IC=3V/0.1A
VCE=5V , IE= −50mA , f=100MHz
VCE=10V , IE=0A , f=1MHz
Packaging specifications and hFE
Type
2SD1468S
Package
hFE
SPT
QRS
Code
Basic ordering unit (pieces)
TP
5000
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/3
2009.12 - Rev.B
2SD1468S
Data Sheet
Electrical characteristics curves
100μA
40
80μA
30
60μA
20
40μA
20μA
10
1000 Ta=25°C
500 VCE=10V
200
400
100
50
20
10
5
2
Ta=25°C
800
1000
600
2000
1000
500
200
100
50
IC/IB=50/1
20
10
20/1
5
10/1
2
1
1
2
5
10 20
50 100 200 500 1000
10000
0.2
100
50
20
10
5
2
1
2
5
10
20
50
0.6
0.8
50
1.0
1
2
1000
Ta=25°C
500
200
100
50
IC=100mA
20
10
IC=50mA
5
IC=10mA
2
1
IC=5mA
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
2
5 10 20
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
10
20
50
100 200
500 1000
Fig.3 DC current gain vs. collector current
Ta=25°C
VCE=5V
1000
500
200
100
50
20
10
5
2
1
0.5 1
5
COLLECTOR CURRENT : IC (mA)
50 100
−0.2 −0.5 −1 −2
−5 −10 −20
−50 −100 −200 −500 −1000
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
Ta=25°C
IC=0A
f=1MHz
100
100
50
20
10
5
2
Ta=25°C
50
ON RESISTANCE : Ron(Ω)
200
0.5
VCE=1V
100
Fig.5 Collector-emitter saturation voltage
vs. base current
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
Ta=25°C
IE=0A
f=1MHz
1
0.1 0.2
VCE=3V
200
BASE CURRENT : IB(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
500
0.4
Fig.2 Ground emitter propagation
characteristics
COLLECTOR CURRENT : IC (mA)
1000
500
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR SATURATION VOLTAGE : VCE(saT) (mV)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Ta=25°C
1000
10
0
Fig.1 Ground emitter output characteristics
5000
2000
20
1
COLLECTOR TO EMITTER VOLTAGE : VCE (mV)
10000
Ta=25°C
5000
200
IB=0μA
0
0
10000
DC CURRENT GAIN : hFE
120μA
TRANSITION FREQUENCY : fT (MHz)
140μA
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
50
20
10
5
2
1
0.5
0.2
1
0.1 0.2
0.5
1
2
5
10
20
50
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
2/3
100
0.1
10 20
50
100 200
500 1000 2000
5000 10000
BASE CURRENT : IB (mA)
Fig.9 "ON" resistance
vs. base current characteristics
2009.12 - Rev.B
2SD1468S
Data Sheet
R(1kΩ)
input
Vi
1kHz
100mVrms
IB
V output
X
v0
Ron=
v0
vi−v0
×RL
Fig.10 "ON" resistance measurement circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
3/3
2009.12 - Rev.B
Notice
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However, should you incur any damage arising from any inaccuracy or misprint of such
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